Growth of [100]-Textured Gadolinium Nitride Films by CVD

Growth of [100]-Textured Gadolinium Nitride Films by CVD

Textured gadolinium nitride (GdN) thin films grown on (100) lanthanum aluminum oxide substrates were prepared by chemical vapor deposition with gadolinium chloride and ammonia. The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. X‐ray diffraction patterns show t...

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Veröffentlicht in:Chemical vapor deposition 2010-09, Vol.16 (7-9), p.216-219
Hauptverfasser: Brewer, Joseph R., Gernhart, Zane, Liu, Hsin-Yu, Cheung, Chin Li
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Chemical vapor deposition
ferromagnetic
Ferromagnetic materials
Gadolinium
gadolinium nitride
Lanthanum
lanthanum aluminum oxide
Nitrides
Reflection
semiconductor
Semiconductors
textured growth
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Zusammenfassung:Textured gadolinium nitride (GdN) thin films grown on (100) lanthanum aluminum oxide substrates were prepared by chemical vapor deposition with gadolinium chloride and ammonia. The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. X‐ray diffraction patterns show that the (200) reflection peaks from these GdN films have full widths at half maximum of ca. 1.2°.
ISSN:0948-1907
1521-3862
1521-3862
DOI:10.1002/cvde.201004288