Growth of [100]-Textured Gadolinium Nitride Films by CVD
Textured gadolinium nitride (GdN) thin films grown on (100) lanthanum aluminum oxide substrates were prepared by chemical vapor deposition with gadolinium chloride and ammonia. The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. X‐ray diffraction patterns show t...
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| Veröffentlicht in: | Chemical vapor deposition 2010-09, Vol.16 (7-9), p.216-219 |
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| container_title | Chemical vapor deposition |
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| creator | Brewer, Joseph R. Gernhart, Zane Liu, Hsin-Yu Cheung, Chin Li |
| description | Textured gadolinium nitride (GdN) thin films grown on (100) lanthanum aluminum oxide substrates were prepared by chemical vapor deposition with gadolinium chloride and ammonia. The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. X‐ray diffraction patterns show that the (200) reflection peaks from these GdN films have full widths at half maximum of ca. 1.2°. |
| doi_str_mv | 10.1002/cvde.201004288 |
| format | Article |
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The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. X‐ray diffraction patterns show that the (200) reflection peaks from these GdN films have full widths at half maximum of ca. 1.2°.</description><identifier>ISSN: 0948-1907</identifier><identifier>ISSN: 1521-3862</identifier><identifier>EISSN: 1521-3862</identifier><identifier>DOI: 10.1002/cvde.201004288</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Aluminum oxide ; Chemical vapor deposition ; ferromagnetic ; Ferromagnetic materials ; Gadolinium ; gadolinium nitride ; Lanthanum ; lanthanum aluminum oxide ; Nitrides ; Reflection ; semiconductor ; Semiconductors ; textured growth</subject><ispartof>Chemical vapor deposition, 2010-09, Vol.16 (7-9), p.216-219</ispartof><rights>Copyright © 2010 WILEY‐VCH Verlag GmbH & Co. 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Vap. Deposition</addtitle><description>Textured gadolinium nitride (GdN) thin films grown on (100) lanthanum aluminum oxide substrates were prepared by chemical vapor deposition with gadolinium chloride and ammonia. The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. X‐ray diffraction patterns show that the (200) reflection peaks from these GdN films have full widths at half maximum of ca. 1.2°.</description><subject>Aluminum oxide</subject><subject>Chemical vapor deposition</subject><subject>ferromagnetic</subject><subject>Ferromagnetic materials</subject><subject>Gadolinium</subject><subject>gadolinium nitride</subject><subject>Lanthanum</subject><subject>lanthanum aluminum oxide</subject><subject>Nitrides</subject><subject>Reflection</subject><subject>semiconductor</subject><subject>Semiconductors</subject><subject>textured growth</subject><issn>0948-1907</issn><issn>1521-3862</issn><issn>1521-3862</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkM1PwkAQxTdGExG9eu7NU3E_292jQagmBImgHozZtN1pXG0p7rYC_70lGOLNw2Te4f0m8x5ClwQPCMb0Ov82MKC405xKeYR6RFASMhnRY9TDisuQKByfojPvPzDGKmK0h2Ti6nXzHtRF8NqRb-ECNk3rwARJaurSLm1bBVPbOGsgGNuy8kG2DYbPt-fopEhLDxe_u4-exqPF8C6cPCT3w5tJmDOhZKiIzDnPwPBYGQGxyQEKSVTWSY45CMmy7ltDjYrTlAsmMmGY5LhIKSlMzProan935eqvFnyjK-tzKMt0CXXrtVQRUUx000eDvTN3tfcOCr1ytkrdVhOsdw3pXUP60FAHqD2wtiVs_3HrLvPoLxvuWesb2BzY1H3qKGax0C_TRM8fZ4wms4mesx_okHf0</recordid><startdate>201009</startdate><enddate>201009</enddate><creator>Brewer, Joseph R.</creator><creator>Gernhart, Zane</creator><creator>Liu, Hsin-Yu</creator><creator>Cheung, Chin Li</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>201009</creationdate><title>Growth of [100]-Textured Gadolinium Nitride Films by CVD</title><author>Brewer, Joseph R. ; Gernhart, Zane ; Liu, Hsin-Yu ; Cheung, Chin Li</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3598-918c44bed479d5e7dceef819be7d404e583b288d2d97aa4535b5d3840fa21fd73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Aluminum oxide</topic><topic>Chemical vapor deposition</topic><topic>ferromagnetic</topic><topic>Ferromagnetic materials</topic><topic>Gadolinium</topic><topic>gadolinium nitride</topic><topic>Lanthanum</topic><topic>lanthanum aluminum oxide</topic><topic>Nitrides</topic><topic>Reflection</topic><topic>semiconductor</topic><topic>Semiconductors</topic><topic>textured growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Brewer, Joseph R.</creatorcontrib><creatorcontrib>Gernhart, Zane</creatorcontrib><creatorcontrib>Liu, Hsin-Yu</creatorcontrib><creatorcontrib>Cheung, Chin Li</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Chemical vapor deposition</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Brewer, Joseph R.</au><au>Gernhart, Zane</au><au>Liu, Hsin-Yu</au><au>Cheung, Chin Li</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of [100]-Textured Gadolinium Nitride Films by CVD</atitle><jtitle>Chemical vapor deposition</jtitle><addtitle>Chem. 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| language | eng |
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| source | Wiley Online Library All Journals |
| subjects | Aluminum oxide Chemical vapor deposition ferromagnetic Ferromagnetic materials Gadolinium gadolinium nitride Lanthanum lanthanum aluminum oxide Nitrides Reflection semiconductor Semiconductors textured growth |
| title | Growth of [100]-Textured Gadolinium Nitride Films by CVD |
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