Investigation of forming-gas annealed CeO2 thin film on GaN
The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N 2 + 5% H 2 ) ambient on metal–organic decomposed cerium oxide (CeO 2 ) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO 2 phase transformation was report...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2011-06, Vol.22 (6), p.583-591 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Quah, Hock Jin Cheong, Kuan Yew Hassan, Zainuriah Lockman, Zainovia |
| description | The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N
2
+ 5% H
2
) ambient on metal–organic decomposed cerium oxide (CeO
2
) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO
2
phase transformation was reported and presence of CeO
2
, α-Ce
2
O
3
, and β-Ga
2
O
3
had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO
2
films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge. |
| doi_str_mv | 10.1007/s10854-010-0181-0 |
| format | Article |
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2
+ 5% H
2
) ambient on metal–organic decomposed cerium oxide (CeO
2
) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO
2
phase transformation was reported and presence of CeO
2
, α-Ce
2
O
3
, and β-Ga
2
O
3
had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO
2
films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-010-0181-0</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Annealing ; Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder ; Cross-disciplinary physics: materials science; rheology ; Density ; Deposition ; Dielectric breakdown and space-charge effects ; Dielectric properties of solids and liquids ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Electronics ; Exact sciences and technology ; Gallium nitrides ; Grain size ; Heat treatment ; Materials Science ; Metals. Metallurgy ; Optical and Electronic Materials ; Oxides ; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations ; Physics ; Production techniques ; Thin films ; Treatment of materials and its effects on microstructure and properties</subject><ispartof>Journal of materials science. Materials in electronics, 2011-06, Vol.22 (6), p.583-591</ispartof><rights>Springer Science+Business Media, LLC 2010</rights><rights>2015 INIST-CNRS</rights><rights>Springer Science+Business Media, LLC 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-e220e40a904e2bfd79102c48c7dea31a1984b8c0e7453439644a89d3e7ce0c113</citedby><cites>FETCH-LOGICAL-c340t-e220e40a904e2bfd79102c48c7dea31a1984b8c0e7453439644a89d3e7ce0c113</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-010-0181-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-010-0181-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24181548$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Quah, Hock Jin</creatorcontrib><creatorcontrib>Cheong, Kuan Yew</creatorcontrib><creatorcontrib>Hassan, Zainuriah</creatorcontrib><creatorcontrib>Lockman, Zainovia</creatorcontrib><title>Investigation of forming-gas annealed CeO2 thin film on GaN</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N
2
+ 5% H
2
) ambient on metal–organic decomposed cerium oxide (CeO
2
) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO
2
phase transformation was reported and presence of CeO
2
, α-Ce
2
O
3
, and β-Ga
2
O
3
had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO
2
films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Density</subject><subject>Deposition</subject><subject>Dielectric breakdown and space-charge effects</subject><subject>Dielectric properties of solids and liquids</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>Grain size</subject><subject>Heat treatment</subject><subject>Materials Science</subject><subject>Metals. Metallurgy</subject><subject>Optical and Electronic Materials</subject><subject>Oxides</subject><subject>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Thin films</subject><subject>Treatment of materials and its effects on microstructure and properties</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp90EFLwzAUB_AgCs7pB_BWBNFL9SV5bRM8ydA5GO6i4C1kaVo72nQmm-C3N6OiIOgh5JDf-_PyJ-SUwhUFKK4DBZFhChTiETSFPTKiWcFTFOxln4xAZkWKGWOH5CiEFQDkyMWI3Mzcuw2bptabpndJXyVV77vG1WmtQ6Kds7q1ZTKxC5ZsXhuXVE3bJVFO9eMxOah0G-zJ1z0mz_d3T5OHdL6Yzia389RwhE1qGQOLoCWgZcuqLCQFZlCYorSaU02lwKUwYAvMOHKZI2ohS24LY8FQysfkYshd-_5tG7dVXROMbVvtbL8NSsicSqCFjPLyX0lzyXgePY_07Bdd9Vvv4j-UyBEE5sAiogMyvg_B20qtfdNp_6EoqF3vauhdxd7VrncFceb8K1gHo9vKa2ea8D3IMLIMRXRscCE-udr6nwX-Dv8E9uGOzg</recordid><startdate>20110601</startdate><enddate>20110601</enddate><creator>Quah, Hock Jin</creator><creator>Cheong, Kuan Yew</creator><creator>Hassan, Zainuriah</creator><creator>Lockman, Zainovia</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><scope>7QQ</scope></search><sort><creationdate>20110601</creationdate><title>Investigation of forming-gas annealed CeO2 thin film on GaN</title><author>Quah, Hock Jin ; Cheong, Kuan Yew ; Hassan, Zainuriah ; Lockman, Zainovia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-e220e40a904e2bfd79102c48c7dea31a1984b8c0e7453439644a89d3e7ce0c113</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Density</topic><topic>Deposition</topic><topic>Dielectric breakdown and space-charge effects</topic><topic>Dielectric properties of solids and liquids</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>Grain size</topic><topic>Heat treatment</topic><topic>Materials Science</topic><topic>Metals. Metallurgy</topic><topic>Optical and Electronic Materials</topic><topic>Oxides</topic><topic>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Thin films</topic><topic>Treatment of materials and its effects on microstructure and properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Quah, Hock Jin</creatorcontrib><creatorcontrib>Cheong, Kuan Yew</creatorcontrib><creatorcontrib>Hassan, Zainuriah</creatorcontrib><creatorcontrib>Lockman, Zainovia</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><collection>Ceramic Abstracts</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Quah, Hock Jin</au><au>Cheong, Kuan Yew</au><au>Hassan, Zainuriah</au><au>Lockman, Zainovia</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of forming-gas annealed CeO2 thin film on GaN</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2011-06-01</date><risdate>2011</risdate><volume>22</volume><issue>6</issue><spage>583</spage><epage>591</epage><pages>583-591</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N
2
+ 5% H
2
) ambient on metal–organic decomposed cerium oxide (CeO
2
) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO
2
phase transformation was reported and presence of CeO
2
, α-Ce
2
O
3
, and β-Ga
2
O
3
had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO
2
films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-010-0181-0</doi><tpages>9</tpages></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2011-06, Vol.22 (6), p.583-591 |
| issn | 0957-4522 1573-482X |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Annealing Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: electronic structure, electrical, magnetic, and optical properties Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder Cross-disciplinary physics: materials science rheology Density Deposition Dielectric breakdown and space-charge effects Dielectric properties of solids and liquids Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology Gallium nitrides Grain size Heat treatment Materials Science Metals. Metallurgy Optical and Electronic Materials Oxides Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Production techniques Thin films Treatment of materials and its effects on microstructure and properties |
| title | Investigation of forming-gas annealed CeO2 thin film on GaN |
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