Investigation of forming-gas annealed CeO2 thin film on GaN

The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N 2 + 5% H 2 ) ambient on metal–organic decomposed cerium oxide (CeO 2 ) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO 2 phase transformation was report...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2011-06, Vol.22 (6), p.583-591
Hauptverfasser:	Quah, Hock Jin, Cheong, Kuan Yew, Hassan, Zainuriah, Lockman, Zainovia
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: electronic structure, electrical, magnetic, and optical properties Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder Cross-disciplinary physics: materials science rheology Density Deposition Dielectric breakdown and space-charge effects Dielectric properties of solids and liquids Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology Gallium nitrides Grain size Heat treatment Materials Science Metals. Metallurgy Optical and Electronic Materials Oxides Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Production techniques Thin films Treatment of materials and its effects on microstructure and properties
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Zusammenfassung:	The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N 2 + 5% H 2 ) ambient on metal–organic decomposed cerium oxide (CeO 2 ) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO 2 phase transformation was reported and presence of CeO 2 , α-Ce 2 O 3 , and β-Ga 2 O 3 had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO 2 films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge.
ISSN:	0957-4522 1573-482X
DOI:	10.1007/s10854-010-0181-0