High-Throughput Nanogap Formation Using Single Ramp Feedback Control
We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance sh...
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2011-07, Vol.10 (4), p.806-809 |
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| container_end_page | 809 |
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| container_title | IEEE transactions on nanotechnology |
| container_volume | 10 |
| creator | Johnson, S. L. Hunley, D. P. Sundararajan, A. Johnson, A. T. C. Strachan, D. R. |
| description | We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique. |
| doi_str_mv | 10.1109/TNANO.2010.2080283 |
| format | Article |
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L. ; Hunley, D. P. ; Sundararajan, A. ; Johnson, A. T. C. ; Strachan, D. R.</creator><creatorcontrib>Johnson, S. L. ; Hunley, D. P. ; Sundararajan, A. ; Johnson, A. T. C. ; Strachan, D. R.</creatorcontrib><description>We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2010.2080283</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Arrays ; Clamps ; Electric potential ; Electromigration ; Electronics ; Exact sciences and technology ; Feedback control ; Junctions ; Lead ; molecular electronics ; Molecular electronics, nanoelectronics ; Nanocomposites ; nanoelectronics ; nanogap electrodes ; Nanomaterials ; Nanostructure ; parallel nanogaps ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. 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This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.</description><subject>Applied sciences</subject><subject>Arrays</subject><subject>Clamps</subject><subject>Electric potential</subject><subject>Electromigration</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Feedback control</subject><subject>Junctions</subject><subject>Lead</subject><subject>molecular electronics</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanocomposites</subject><subject>nanoelectronics</subject><subject>nanogap electrodes</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>parallel nanogaps</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Voltage</subject><subject>Voltage control</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1PwkAQhhujiYj-Ab00JsZTcWa3u90eCYqYEEgUEm-bbbuFYunibnvw37sI4eBlPjLPvJl5g-AWYYAI6dNiNpzNBwR8T0AAEfQs6GEaYwQg2LmvGeUREvZ5GVw5twHAhDPRC54n1WodLdbWdKv1rmvDmWrMSu3CsbFb1VamCZeualbhhw-1Dt_V1s-0LjKVf4Uj07TW1NfBRalqp2-OuR8sxy-L0SSazl_fRsNplMeEtBGnmpc8ITTTEGcFIyRjumSAXKlCQcEhVRwxTjKEokAKnOboXxEMVIJc037weNDdWfPdadfKbeVyXdeq0aZzUqQchSAJePL-H7kxnW38cTJFxjknsIfIAcqtcc7qUu5stVX2RyLIva3yz1a5t1UebfVLD0dl5XJVl1Y1eeVOmySmnLE48dzdgau01qcxY4KQNKG_Och-ow</recordid><startdate>20110701</startdate><enddate>20110701</enddate><creator>Johnson, S. L.</creator><creator>Hunley, D. P.</creator><creator>Sundararajan, A.</creator><creator>Johnson, A. T. C.</creator><creator>Strachan, D. 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Solid state devices</topic><topic>Voltage</topic><topic>Voltage control</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Johnson, S. L.</creatorcontrib><creatorcontrib>Hunley, D. P.</creatorcontrib><creatorcontrib>Sundararajan, A.</creatorcontrib><creatorcontrib>Johnson, A. T. C.</creatorcontrib><creatorcontrib>Strachan, D. 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L.</au><au>Hunley, D. P.</au><au>Sundararajan, A.</au><au>Johnson, A. T. C.</au><au>Strachan, D. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Throughput Nanogap Formation Using Single Ramp Feedback Control</atitle><jtitle>IEEE transactions on nanotechnology</jtitle><stitle>TNANO</stitle><date>2011-07-01</date><risdate>2011</risdate><volume>10</volume><issue>4</issue><spage>806</spage><epage>809</epage><pages>806-809</pages><issn>1536-125X</issn><eissn>1941-0085</eissn><coden>ITNECU</coden><abstract>We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. 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| ispartof | IEEE transactions on nanotechnology, 2011-07, Vol.10 (4), p.806-809 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Arrays Clamps Electric potential Electromigration Electronics Exact sciences and technology Feedback control Junctions Lead molecular electronics Molecular electronics, nanoelectronics Nanocomposites nanoelectronics nanogap electrodes Nanomaterials Nanostructure parallel nanogaps Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Voltage Voltage control |
| title | High-Throughput Nanogap Formation Using Single Ramp Feedback Control |
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