High-Throughput Nanogap Formation Using Single Ramp Feedback Control

We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance sh...

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Veröffentlicht in:IEEE transactions on nanotechnology 2011-07, Vol.10 (4), p.806-809
Hauptverfasser: Johnson, S. L., Hunley, D. P., Sundararajan, A., Johnson, A. T. C., Strachan, D. R.
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Sprache:eng
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Zusammenfassung:We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2010.2080283