High-Throughput Nanogap Formation Using Single Ramp Feedback Control
We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance sh...
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Veröffentlicht in: | IEEE transactions on nanotechnology 2011-07, Vol.10 (4), p.806-809 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique. |
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ISSN: | 1536-125X 1941-0085 |
DOI: | 10.1109/TNANO.2010.2080283 |