Wannier–Mott excitons on a helically-shaped one-dimensional semiconductor

Wannier–Mott excitons on a helically-shaped one-dimensional semiconductor

Within a simplified model, we explore how bound electron–hole pair (exciton) states and optical transitions between them are affected by the geometry of a helically shaped one-dimensional semiconductor. Among the illustrated geometrical effects are variable enhancement of the binding energy for diff...

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Veröffentlicht in:Physics letters. A 2010-07, Vol.374 (30), p.3076-3079
Hauptverfasser: Sarma, R., Gartstein, Yu.N.
Format: Artikel
Sprache:eng
Schlagworte:
Binding energy
Excitation
Excitons
Optical transition
Semiconductors
Solid state physics
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Beschreibung
Zusammenfassung:Within a simplified model, we explore how bound electron–hole pair (exciton) states and optical transitions between them are affected by the geometry of a helically shaped one-dimensional semiconductor. Among the illustrated geometrical effects are variable enhancement of the binding energy for different excitons and the appearance of new excitonic states with spatially separated electron and hole positioned on different turns of the helix.
ISSN:0375-9601
1873-2429
DOI:10.1016/j.physleta.2010.05.032