Electron-acoustic-phonon scattering in the quantum control of qubit states near the Si/SiO sub(2 interface)

Electron-acoustic-phonon scattering in the quantum control of qubit states near the Si/SiO sub(2 interface)

We suggested a new mechanism for quantum control of a donor electron spin qubit state next to a Si/SiO sub(2 interface. The theoretical calculation results show that the shuttling time versus the donor depth (or electric field strength) exhibits a double-valley feature. The origin of the double-vall...

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Veröffentlicht in:Physics letters. A 2011-01, Vol.375 (4), p.855-859
Hauptverfasser: Gou, Bing-Ping, Zhao, Peiji, Kong, Xiao-Jun
Format: Artikel
Sprache:eng
Schlagworte:
Electric field strength
Electron spin
Mathematical analysis
Origins
Qubits (quantum computing)
Silicon
Silicon dioxide
Solid state physics
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Zusammenfassung:We suggested a new mechanism for quantum control of a donor electron spin qubit state next to a Si/SiO sub(2 interface. The theoretical calculation results show that the shuttling time versus the donor depth (or electric field strength) exhibits a double-valley feature. The origin of the double-valley feature is discussed.)
ISSN:0375-9601
DOI:10.1016/j.physleta.2010.12.048