Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more...
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Veröffentlicht in: | IEEE transactions on electron devices 2005-10, Vol.52 (10), p.2343-2346 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2005.856797 |