Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI CMOS technologies
The impact of either N 2 or N 2/O 2 Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N 2 or N 2/O 2 PWFA with different process parameters on HfZrO 4 has been investigated in detail for high performance 32 nm SOI CMOS devices. Electrical paramete...
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| Veröffentlicht in: | Microelectronic engineering 2011-01, Vol.88 (2), p.141-144 |
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| creator | Kelwing, T. Naumann, A. Trentzsch, M. Graetsch, F. Bayha, B. Herrmann, L. Trui, B. Rudolph, D. Lipp, D. Krause, G. Carter, R. Stephan, R. Kücher, P. Hansch, W. |
| description | The impact of either N
2 or N
2/O
2 Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N
2 or N
2/O
2 PWFA with different process parameters on HfZrO
4 has been investigated in detail for high performance 32
nm SOI CMOS devices. Electrical parameters such as leakage current, capacitance equivalent thickness (CET), threshold voltage and performance as well as reliability data have been taken into account in order to evaluate these treatments. N
2/O
2 annealing results in severe oxide regrowth due to the presence of oxygen in the annealing ambient. A detailed investigation on the impact of N
2 PWFA has been performed.
Finally significant gate leakage current benefit, performance and reliability improvements are demonstrated especially for the N
2 PWFA treatments in combination with HfZrO
4. |
| doi_str_mv | 10.1016/j.mee.2010.09.019 |
| format | Article |
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2 or N
2/O
2 Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N
2 or N
2/O
2 PWFA with different process parameters on HfZrO
4 has been investigated in detail for high performance 32
nm SOI CMOS devices. Electrical parameters such as leakage current, capacitance equivalent thickness (CET), threshold voltage and performance as well as reliability data have been taken into account in order to evaluate these treatments. N
2/O
2 annealing results in severe oxide regrowth due to the presence of oxygen in the annealing ambient. A detailed investigation on the impact of N
2 PWFA has been performed.
Finally significant gate leakage current benefit, performance and reliability improvements are demonstrated especially for the N
2 PWFA treatments in combination with HfZrO
4.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2010.09.019</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Annealing ; Applied sciences ; CMOS ; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Design. Technologies. Operation analysis. Testing ; Devices ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Exact sciences and technology ; Gate leakage ; Hafnium ; Heat treatment ; High-k dielectric ; Integrated circuits ; Leakage current ; Materials science ; Metals. Metallurgy ; PDA ; Physics ; Production techniques ; Reliability ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SOI CMOS ; Surface double layers, schottky barriers, and work functions ; Threshold voltage ; Treatment of materials and its effects on microstructure and properties</subject><ispartof>Microelectronic engineering, 2011-01, Vol.88 (2), p.141-144</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167931710003527$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23635491$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kelwing, T.</creatorcontrib><creatorcontrib>Naumann, A.</creatorcontrib><creatorcontrib>Trentzsch, M.</creatorcontrib><creatorcontrib>Graetsch, F.</creatorcontrib><creatorcontrib>Bayha, B.</creatorcontrib><creatorcontrib>Herrmann, L.</creatorcontrib><creatorcontrib>Trui, B.</creatorcontrib><creatorcontrib>Rudolph, D.</creatorcontrib><creatorcontrib>Lipp, D.</creatorcontrib><creatorcontrib>Krause, G.</creatorcontrib><creatorcontrib>Carter, R.</creatorcontrib><creatorcontrib>Stephan, R.</creatorcontrib><creatorcontrib>Kücher, P.</creatorcontrib><creatorcontrib>Hansch, W.</creatorcontrib><title>Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI CMOS technologies</title><title>Microelectronic engineering</title><description>The impact of either N
2 or N
2/O
2 Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N
2 or N
2/O
2 PWFA with different process parameters on HfZrO
4 has been investigated in detail for high performance 32
nm SOI CMOS devices. Electrical parameters such as leakage current, capacitance equivalent thickness (CET), threshold voltage and performance as well as reliability data have been taken into account in order to evaluate these treatments. N
2/O
2 annealing results in severe oxide regrowth due to the presence of oxygen in the annealing ambient. A detailed investigation on the impact of N
2 PWFA has been performed.
Finally significant gate leakage current benefit, performance and reliability improvements are demonstrated especially for the N
2 PWFA treatments in combination with HfZrO
4.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>CMOS</subject><subject>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gate leakage</subject><subject>Hafnium</subject><subject>Heat treatment</subject><subject>High-k dielectric</subject><subject>Integrated circuits</subject><subject>Leakage current</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>PDA</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Reliability</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SOI CMOS</subject><subject>Surface double layers, schottky barriers, and work functions</subject><subject>Threshold voltage</subject><subject>Treatment of materials and its effects on microstructure and properties</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kU9rGzEUxEVpoa7TD9CbLiG9rKM_K-2KnIppEkOCD2nPQpbe2jK70kaSA-mhnz0KyTmnxzx-DMwMQj8oWVFC5eVxNQGsGKmaqBWh6hNa0L7jjRCy_4wWlekaxWn3FX3L-Uiqbkm_QP8302xswXHAwZcU9xDwHHPBDurxxceATQhgRh_2uIqDGYI_TfifTzYGUwA7DyPYkrzNeIgJc4bDhA9-f2hmSPUzmWABP2w3eH2_fcAF7CHEMe495DP0ZTBjhu_vd4n-Xv_-s75t7rY3m_WvuwY4YaWhrldOKNFJQXaqV3LohLEDmMEZR1nftdxxtVOM9YJJyoiT0LbCSNeRHTXAl-jizXdO8fEEuejJZwvjaALEU9bVkvZU8baSPz8kqVSMd0TWbpfo_B012ZpxSDWnz3pOfjLpWTMuuWgVrdzVGwc14ZOHpLP1UDtxPtXitIteU6Jfd9RHXXfUrztqonTdkb8AqkmSjA</recordid><startdate>20110101</startdate><enddate>20110101</enddate><creator>Kelwing, T.</creator><creator>Naumann, A.</creator><creator>Trentzsch, M.</creator><creator>Graetsch, F.</creator><creator>Bayha, B.</creator><creator>Herrmann, L.</creator><creator>Trui, B.</creator><creator>Rudolph, D.</creator><creator>Lipp, D.</creator><creator>Krause, G.</creator><creator>Carter, R.</creator><creator>Stephan, R.</creator><creator>Kücher, P.</creator><creator>Hansch, W.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110101</creationdate><title>Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI CMOS technologies</title><author>Kelwing, T. ; Naumann, A. ; Trentzsch, M. ; Graetsch, F. ; Bayha, B. ; Herrmann, L. ; Trui, B. ; Rudolph, D. ; Lipp, D. ; Krause, G. ; Carter, R. ; Stephan, R. ; Kücher, P. ; Hansch, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e302t-1d89d5957650b9896f75acfeafdad128743d39b9228526120d6e445a6d70b1ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>CMOS</topic><topic>Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Devices</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gate leakage</topic><topic>Hafnium</topic><topic>Heat treatment</topic><topic>High-k dielectric</topic><topic>Integrated circuits</topic><topic>Leakage current</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>PDA</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Reliability</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SOI CMOS</topic><topic>Surface double layers, schottky barriers, and work functions</topic><topic>Threshold voltage</topic><topic>Treatment of materials and its effects on microstructure and properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kelwing, T.</creatorcontrib><creatorcontrib>Naumann, A.</creatorcontrib><creatorcontrib>Trentzsch, M.</creatorcontrib><creatorcontrib>Graetsch, F.</creatorcontrib><creatorcontrib>Bayha, B.</creatorcontrib><creatorcontrib>Herrmann, L.</creatorcontrib><creatorcontrib>Trui, B.</creatorcontrib><creatorcontrib>Rudolph, D.</creatorcontrib><creatorcontrib>Lipp, D.</creatorcontrib><creatorcontrib>Krause, G.</creatorcontrib><creatorcontrib>Carter, R.</creatorcontrib><creatorcontrib>Stephan, R.</creatorcontrib><creatorcontrib>Kücher, P.</creatorcontrib><creatorcontrib>Hansch, W.</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kelwing, T.</au><au>Naumann, A.</au><au>Trentzsch, M.</au><au>Graetsch, F.</au><au>Bayha, B.</au><au>Herrmann, L.</au><au>Trui, B.</au><au>Rudolph, D.</au><au>Lipp, D.</au><au>Krause, G.</au><au>Carter, R.</au><au>Stephan, R.</au><au>Kücher, P.</au><au>Hansch, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI CMOS technologies</atitle><jtitle>Microelectronic engineering</jtitle><date>2011-01-01</date><risdate>2011</risdate><volume>88</volume><issue>2</issue><spage>141</spage><epage>144</epage><pages>141-144</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>The impact of either N
2 or N
2/O
2 Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N
2 or N
2/O
2 PWFA with different process parameters on HfZrO
4 has been investigated in detail for high performance 32
nm SOI CMOS devices. Electrical parameters such as leakage current, capacitance equivalent thickness (CET), threshold voltage and performance as well as reliability data have been taken into account in order to evaluate these treatments. N
2/O
2 annealing results in severe oxide regrowth due to the presence of oxygen in the annealing ambient. A detailed investigation on the impact of N
2 PWFA has been performed.
Finally significant gate leakage current benefit, performance and reliability improvements are demonstrated especially for the N
2 PWFA treatments in combination with HfZrO
4.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2010.09.019</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2011-01, Vol.88 (2), p.141-144 |
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| language | eng |
| recordid | cdi_proquest_miscellaneous_896181934 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Annealing Applied sciences CMOS Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition Design. Technologies. Operation analysis. Testing Devices Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Gate leakage Hafnium Heat treatment High-k dielectric Integrated circuits Leakage current Materials science Metals. Metallurgy PDA Physics Production techniques Reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SOI CMOS Surface double layers, schottky barriers, and work functions Threshold voltage Treatment of materials and its effects on microstructure and properties |
| title | Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI CMOS technologies |
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