Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI CMOS technologies

The impact of either N 2 or N 2/O 2 Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N 2 or N 2/O 2 PWFA with different process parameters on HfZrO 4 has been investigated in detail for high performance 32 nm SOI CMOS devices. Electrical paramete...

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Veröffentlicht in:	Microelectronic engineering 2011-01, Vol.88 (2), p.141-144
Hauptverfasser:	Kelwing, T., Naumann, A., Trentzsch, M., Graetsch, F., Bayha, B., Herrmann, L., Trui, B., Rudolph, D., Lipp, D., Krause, G., Carter, R., Stephan, R., Kücher, P., Hansch, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences CMOS Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition Design. Technologies. Operation analysis. Testing Devices Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Gate leakage Hafnium Heat treatment High-k dielectric Integrated circuits Leakage current Materials science Metals. Metallurgy PDA Physics Production techniques Reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SOI CMOS Surface double layers, schottky barriers, and work functions Threshold voltage Treatment of materials and its effects on microstructure and properties
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Zusammenfassung:	The impact of either N 2 or N 2/O 2 Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N 2 or N 2/O 2 PWFA with different process parameters on HfZrO 4 has been investigated in detail for high performance 32 nm SOI CMOS devices. Electrical parameters such as leakage current, capacitance equivalent thickness (CET), threshold voltage and performance as well as reliability data have been taken into account in order to evaluate these treatments. N 2/O 2 annealing results in severe oxide regrowth due to the presence of oxygen in the annealing ambient. A detailed investigation on the impact of N 2 PWFA has been performed. Finally significant gate leakage current benefit, performance and reliability improvements are demonstrated especially for the N 2 PWFA treatments in combination with HfZrO 4.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2010.09.019