A 210-GHz bandwidth electrooptic sampler for large signal characterization of InP-based components

We propose an electrooptic sampler at 1.55 μm (wavelength), which uses an ion-irradiated InP-based photoconductor for the optical-to-electrical conversion and a fiber-mounted LiTaO 3 crystal as the electric-field sensor. A measurement bandwidth of 210 GHz is obtained with a signal-to-noise ratio hig...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2005-12, Vol.17 (12), p.2679-2681
Hauptverfasser:	Joulaud, L., Mangeney, J., Chimot, N., Crozat, P., Lourtioz, J.M., Boukari, C., Riet, M., Lefevre, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Conversion Coplanar waveguides Coplanar waveguides (CPWs) Electrooptic devices Electrooptics Noise levels Optical fiber sensors Optical pulses Optical sensors optoelectronic devices photoconducting devices Photoconductivity Photoconductors Samplers Sensor phenomena and characterization Signal to noise ratio time-domain measurements Wavelength conversion Wavelength measurement Wavelengths
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We propose an electrooptic sampler at 1.55 μm (wavelength), which uses an ion-irradiated InP-based photoconductor for the optical-to-electrical conversion and a fiber-mounted LiTaO 3 crystal as the electric-field sensor. A measurement bandwidth of 210 GHz is obtained with a signal-to-noise ratio higher than 17 dB. These results are found to be independent of the amplitude of the 2.1-ps excitation pulse, which reaches values as high as 0.81 V. Large signal characterization of InP-based components are thus allowed. The performance of our system is validated by test measurements performed on coplanar waveguides made on semi-insulating InP substrates.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2005.859499