High sensitivity MOSFET-based neutron dosimetry

A new dosemeter based on a metal-oxide-semiconductor field effect transistor sensitive to both neutrons and gamma radiation was manufactured at LAAS-CNRS Laboratory, Toulouse, France. In order to be used for neutron dosimetry, a thin film of lithium fluoride was deposited on the surface of the gate...

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Bibliographische Detailangaben

Veröffentlicht in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010-09, Vol.621 (1), p.611-614
Hauptverfasser:	Fragopoulou, M., Konstantakos, V., Zamani, M., Siskos, S., Laopoulos, T., Sarrabayrouse, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accelerators Deposition Dosage Dosimeters Dosimetry Fast neutrons Gamma rays MOSFET’s Neutron dosimetry Thin films
Online-Zugang:	Volltext
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