High sensitivity MOSFET-based neutron dosimetry

High sensitivity MOSFET-based neutron dosimetry

A new dosemeter based on a metal-oxide-semiconductor field effect transistor sensitive to both neutrons and gamma radiation was manufactured at LAAS-CNRS Laboratory, Toulouse, France. In order to be used for neutron dosimetry, a thin film of lithium fluoride was deposited on the surface of the gate...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010-09, Vol.621 (1), p.611-614
Hauptverfasser: Fragopoulou, M., Konstantakos, V., Zamani, M., Siskos, S., Laopoulos, T., Sarrabayrouse, G.
Format: Artikel
Sprache:eng
Schlagworte:
Accelerators
Deposition
Dosage
Dosimeters
Dosimetry
Fast neutrons
Gamma rays
MOSFET’s
Neutron dosimetry
Thin films
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Beschreibung
Zusammenfassung:A new dosemeter based on a metal-oxide-semiconductor field effect transistor sensitive to both neutrons and gamma radiation was manufactured at LAAS-CNRS Laboratory, Toulouse, France. In order to be used for neutron dosimetry, a thin film of lithium fluoride was deposited on the surface of the gate of the device. The characteristics of the dosemeter, such as the dependence of its response to neutron dose and dose rate, were investigated. The studied dosemeter was very sensitive to gamma rays compared to other dosemeters proposed in the literature. Its response in thermal neutrons was found to be much higher than in fast neutrons and gamma rays.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2010.06.095