Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETs
Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the I D (V G ) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, th...
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| Veröffentlicht in: | IEEE electron device letters 2006-09, Vol.27 (9), p.775-777 |
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| container_title | IEEE electron device letters |
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| creator | Colinge, J.P. Weize Xiong Cleavelin, C.R. Schulz, T. Schrufer, K. Matthews, K. Patruno, P. |
| description | Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the I D (V G ) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model |
| doi_str_mv | 10.1109/LED.2006.881086 |
| format | Article |
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These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2006.881086</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Devices ; Electronics ; Electrons ; Etching ; Exact sciences and technology ; Fins ; Lithography ; Mathematical models ; MOSFETs ; Oscillations ; Particle scattering ; quantum wires ; Semiconductor device measurement ; semiconductor device measurements ; Semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. 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These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model</description><subject>Applied sciences</subject><subject>Devices</subject><subject>Electronics</subject><subject>Electrons</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Fins</subject><subject>Lithography</subject><subject>Mathematical models</subject><subject>MOSFETs</subject><subject>Oscillations</subject><subject>Particle scattering</subject><subject>quantum wires</subject><subject>Semiconductor device measurement</subject><subject>semiconductor device measurements</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Silicon</subject><subject>Silicon on insulator technology</subject><subject>silicon-on-insulator (SOI) technology</subject><subject>Temperature</subject><subject>Transistors</subject><subject>Two dimensional</subject><subject>Wires</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhhdRsFbPHrwEQTyl3c1-ZPck0tZaiFRsPS-bdRZS8lF3E8R_b0oKBU8DM8_7wjwI3RI8IQSrabaYTxKMxURKgqU4QyPCuYwxF_QcjXDKSEwJFpfoKoQdxoSxlI3Q00fTVPEWqj1403Yeoqz5iedFBXUomtqU0cI5sG2Iijp6L-KlaSHarFfR23rzstiGa3ThTBng5jjH6LNfz17jbL1czZ6z2FKO21gqx7EFl1oO1lpF7ReA4pLkNElymyrALiXMJVYa6hKTpzk2wFj_D1NGJHSMHofevW--OwitropgoSxNDU0XtFSCCMmZ6Mn7f-Su6Xz_SdCKJITINDlA0wGyvgnBg9N7X1TG_2qC9UGn7nXqg0496OwTD8daE6wpnTe1LcIpJjFXVNKeuxu4AgBOZyGpTDn9Ayt-e00</recordid><startdate>20060901</startdate><enddate>20060901</enddate><creator>Colinge, J.P.</creator><creator>Weize Xiong</creator><creator>Cleavelin, C.R.</creator><creator>Schulz, T.</creator><creator>Schrufer, K.</creator><creator>Matthews, K.</creator><creator>Patruno, P.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| ispartof | IEEE electron device letters, 2006-09, Vol.27 (9), p.775-777 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Devices Electronics Electrons Etching Exact sciences and technology Fins Lithography Mathematical models MOSFETs Oscillations Particle scattering quantum wires Semiconductor device measurement semiconductor device measurements Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon Silicon on insulator technology silicon-on-insulator (SOI) technology Temperature Transistors Two dimensional Wires |
| title | Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETs |
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