Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETs

Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the I D (V G ) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, th...

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Veröffentlicht in:	IEEE electron device letters 2006-09, Vol.27 (9), p.775-777
Hauptverfasser:	Colinge, J.P., Weize Xiong, Cleavelin, C.R., Schulz, T., Schrufer, K., Matthews, K., Patruno, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Devices Electronics Electrons Etching Exact sciences and technology Fins Lithography Mathematical models MOSFETs Oscillations Particle scattering quantum wires Semiconductor device measurement semiconductor device measurements Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon Silicon on insulator technology silicon-on-insulator (SOI) technology Temperature Transistors Two dimensional Wires
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Zusammenfassung:	Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the I D (V G ) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2006.881086