Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

Applying nanometer dot‐like doping to the channel region causes the intrinsic and effective mobilities of amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistor to increase. The nanodot doping reduces the effective channel length and lowers the energy barrier to facilitate electron transp...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Weinheim) 2011-10, Vol.23 (37), p.4237-4242
Hauptverfasser:	Zan, Hsiao-Wen, Tsai, Wu-Wei, Chen, Chia-Hsin, Tsai, Chuang-Chuang
Format:	Artikel
Sprache:	eng
Schlagworte:	dot doping Gallium - chemistry Indium - chemistry Nanostructures - chemistry Oxides - chemistry Particle Size Polystyrenes - chemistry Radio Frequency Identification Device - methods self-alignment thin-film transistors Transistors, Electronic Zinc Compounds - chemistry
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Applying nanometer dot‐like doping to the channel region causes the intrinsic and effective mobilities of amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistor to increase. The nanodot doping reduces the effective channel length and lowers the energy barrier to facilitate electron transport in the a‐IGZO film.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201102530