Real-Time Observation of Impurity Diffusion in Silicon Nanowires

Solid-state diffusion of the transition metal impurities, gold (Au), nickel (Ni), and copper (Cu), in silicon (Si) nanowires was studied by in situ transmission electron microscopy. Compared to diffusion in a bulk crystal, Au diffusion is extremely slow when the amount of metal is limited but signif...

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Veröffentlicht in:	Nano letters 2011-09, Vol.11 (9), p.3803-3808
Hauptverfasser:	Holmberg, Vincent C, Collier, Katharine A, Korgel, Brian A
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Condensed matter: structure, mechanical and thermal properties Copper Cross-disciplinary physics: materials science rheology Crystallization Diffusion Diffusion in nanoscale solids Diffusion in solids Diffusion rate Electrons Exact sciences and technology Gold Impurities Materials science Metal Nanoparticles - chemistry Microscopy, Electron, Transmission - methods Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanotechnology - methods Nanowires Nanowires - chemistry Nickel Physics Quantum wires Silicon Silicon - chemistry Temperature Transport properties of condensed matter (nonelectronic)
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Beschreibung
Zusammenfassung:	Solid-state diffusion of the transition metal impurities, gold (Au), nickel (Ni), and copper (Cu), in silicon (Si) nanowires was studied by in situ transmission electron microscopy. Compared to diffusion in a bulk crystal, Au diffusion is extremely slow when the amount of metal is limited but significantly enhanced when an unlimited supply is available. Cu and Ni diffusion leads to rapid silicide formation but slows considerably with physical encapsulation by a volume-restricting carbon shell.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl201879u