The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process
Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vert...
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| Veröffentlicht in: | IEEE photonics technology letters 2008-02, Vol.20 (3), p.175-177 |
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| container_end_page | 177 |
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| container_start_page | 175 |
| container_title | IEEE photonics technology letters |
| container_volume | 20 |
| creator | Jun-Seok Ha Lee, S.W. Hyun-Jae Lee Lee Hyo-Jong Lee, S.H. Goto, H. Kato, T. Fujii, K. Cho, M.W. Yao, T. |
| description | Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation. |
| doi_str_mv | 10.1109/LPT.2007.912491 |
| format | Article |
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The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2007.912491</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Buffer layers ; Chemical etching ; Chemical lift-off ; Chemical processes ; Chromium nitride ; CrN buffer ; Electric potential ; Electrostatic discharge ; Etching ; Etching (metallography) ; Fabrication ; Gallium nitride ; Gallium nitrides ; GaN ; Light emitting diodes ; light-emitting diodes (LEDs) ; Photonic crystals ; Temperature ; Thermal conductivity ; vertical light-emitting diode (LED) ; Voltage</subject><ispartof>IEEE photonics technology letters, 2008-02, Vol.20 (3), p.175-177</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c490t-5fe66d0c762bc8c2c661e132d0954da461138e7917f0f812cdc84334bf09b9723</citedby><cites>FETCH-LOGICAL-c490t-5fe66d0c762bc8c2c661e132d0954da461138e7917f0f812cdc84334bf09b9723</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4429333$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4429333$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jun-Seok Ha</creatorcontrib><creatorcontrib>Lee, S.W.</creatorcontrib><creatorcontrib>Hyun-Jae Lee</creatorcontrib><creatorcontrib>Lee Hyo-Jong</creatorcontrib><creatorcontrib>Lee, S.H.</creatorcontrib><creatorcontrib>Goto, H.</creatorcontrib><creatorcontrib>Kato, T.</creatorcontrib><creatorcontrib>Fujii, K.</creatorcontrib><creatorcontrib>Cho, M.W.</creatorcontrib><creatorcontrib>Yao, T.</creatorcontrib><title>The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation.</description><subject>Buffer layers</subject><subject>Chemical etching</subject><subject>Chemical lift-off</subject><subject>Chemical processes</subject><subject>Chromium nitride</subject><subject>CrN buffer</subject><subject>Electric potential</subject><subject>Electrostatic discharge</subject><subject>Etching</subject><subject>Etching (metallography)</subject><subject>Fabrication</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Light emitting diodes</subject><subject>light-emitting diodes (LEDs)</subject><subject>Photonic crystals</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>vertical light-emitting diode (LED)</subject><subject>Voltage</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kTtPwzAQxyMEEqUwM7BEDDClvXOch0dUWkCK1CK1rFbi2K2rPMB2B749rlIxMHDL3Um_e_6D4BZhgghsWqzWEwKQTRgSyvAsGCGjGAFm9NzH4GPEOLkMrqzdAyBNYjoK3tc7GS7KymhROt13Ya_CD2mcT5uw0Nudi-atdk532_BZ97W04cYek9lOtidIuWipVLgyvZDWXgcXqmysvDn5cbBZzNez16hYvrzNnopIUAYuSpRM0xpElpJK5IKINEWJMamBJbQuaeqXzWXGMFOgciSiFjmNY1opYBXLSDwOHoe-n6b_OkjreKutkE1TdrI_WJ7njFJKkHry4V8y9q9I_CQP3v8B9_3BdP4KnqeEMQAKHpoOkDC9tUYq_ml0W5pvjsCPSnCvBD8qwQclfMXdUKGllL-0343F3n4AJLiB7g</recordid><startdate>20080201</startdate><enddate>20080201</enddate><creator>Jun-Seok Ha</creator><creator>Lee, S.W.</creator><creator>Hyun-Jae Lee</creator><creator>Lee Hyo-Jong</creator><creator>Lee, S.H.</creator><creator>Goto, H.</creator><creator>Kato, T.</creator><creator>Fujii, K.</creator><creator>Cho, M.W.</creator><creator>Yao, T.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2007.912491</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| issn | 1041-1135 1941-0174 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Buffer layers Chemical etching Chemical lift-off Chemical processes Chromium nitride CrN buffer Electric potential Electrostatic discharge Etching Etching (metallography) Fabrication Gallium nitride Gallium nitrides GaN Light emitting diodes light-emitting diodes (LEDs) Photonic crystals Temperature Thermal conductivity vertical light-emitting diode (LED) Voltage |
| title | The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process |
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