The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vert...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2008-02, Vol.20 (3), p.175-177
Hauptverfasser: Jun-Seok Ha, Lee, S.W., Hyun-Jae Lee, Lee Hyo-Jong, Lee, S.H., Goto, H., Kato, T., Fujii, K., Cho, M.W., Yao, T.
Format: Artikel
Sprache:eng
Schlagworte:
Buffer layers
Chemical etching
Chemical lift-off
Chemical processes
Chromium nitride
CrN buffer
Electric potential
Electrostatic discharge
Etching
Etching (metallography)
Fabrication
Gallium nitride
Gallium nitrides
GaN
Light emitting diodes
light-emitting diodes (LEDs)
Photonic crystals
Temperature
Thermal conductivity
vertical light-emitting diode (LED)
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.912491