Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrate

We studied the effects of an AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic high electron mobility transistors (mHEMTs) on GaAs substrate. By implementing an AlGaAsSb electron supply layer, we drastically improved the electron mobility of InGaAs/InAlAs heterostructures for mHEMTs. An A...

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Veröffentlicht in:	Journal of crystal growth 2011-05, Vol.323 (1), p.522-524
Hauptverfasser:	Geka, Hirotaka, Yamada, Satoshi, Toita, Masato, Nagase, Kazuhiro, Kuze, Naohiro
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Doping A3. Molecular beam epitaxy A3. Quantum wells Applied sciences B1. Antimonides B2. Semiconducting III–V materials B3. High electron mobility transistors Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Crystal growth Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Gallium arsenide Gallium arsenides Heterostructures High electron mobility transistors Indium gallium arsenides Materials science Metamorphic Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Physics Quantum wells Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface and interface electron states Transistors
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Zusammenfassung:	We studied the effects of an AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic high electron mobility transistors (mHEMTs) on GaAs substrate. By implementing an AlGaAsSb electron supply layer, we drastically improved the electron mobility of InGaAs/InAlAs heterostructures for mHEMTs. An AlGaAsSb electron supply layer for InGaAs/InAlAs heterostructures on GaAs substrates promises high-performance mHEMTs with low production cost.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2010.12.078