Measuring the light emission profile in organic light-emitting diodes with nanometre spatial resolution

Determining the precise shape of the emission profile across the thickness of the active layer in organic light-emitting diodes is of importance for device optimization and assessing the validity of advanced device models. We present a comprehensive method for accurately measuring the shape of the e...

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Veröffentlicht in:Nature photonics 2010-05, Vol.4 (5), p.329-335
Hauptverfasser: Carvelli, M, Coehoorn, R, van Mensfoort, S. L. M, Megens, M, Wehenkel, D, Bartyzel, M, Greiner, H, Janssen, R. A. J
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Sprache:eng
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Zusammenfassung:Determining the precise shape of the emission profile across the thickness of the active layer in organic light-emitting diodes is of importance for device optimization and assessing the validity of advanced device models. We present a comprehensive method for accurately measuring the shape of the emission profile, the intrinsic spectrum of emitting dipoles and the emitting dipole orientation. The method uses a microcavity light outcoupling model, which includes self-absorption and optical anisotropy, and is based on the full wavelength, angle and polarization resolved emission intensity. Application to blue (polyfluorene-based) and orange-red (NRS-PPV) polymer organic light-emitting diodes reveals a peaked shape of the emission profile. A significant voltage and layer thickness dependence of the peak positions is observed, with a demonstrated resolution better than 5 nm. Precise spatial characterization of the origin of light emission from organic light-emitting diodes is important for improving the design of future devices and gaining valuable insight into their operation. Here, a characterization scheme that achieves this task with a spatial resolution better than 5 nm is reported.
ISSN:1749-4885
1749-4893
DOI:10.1038/nphoton.2010.32