Mechanism and applications of local droplet etching

We give an overview on the fabrication and applications of deep nanoholes in semiconductor surfaces generated by self-assembled drilling with liquid metal droplets as etchant. The method is fully compatible with conventional molecular beam epitaxy equipment. We discuss the mechanism of nanohole form...

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Veröffentlicht in:	Journal of crystal growth 2011-05, Vol.323 (1), p.263-266
Hauptverfasser:	Heyn, Ch, Stemmann, A., Klingbeil, M., Strelow, Ch, Köppen, T., Mendach, S., Hansen, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Nanostructures A1. Surface processes A3. Molecular beam epitaxy B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Crystal growth Droplets Exact sciences and technology Gallium arsenide Gallium arsenides Materials science Methods of deposition of films and coatings film growth and epitaxy Methods of nanofabrication Molecular, atomic, ion, and chemical beam epitaxy Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Other semiconductors Physics Quantum dots Self-assembly Semiconductors Specific materials
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Beschreibung
Zusammenfassung:	We give an overview on the fabrication and applications of deep nanoholes in semiconductor surfaces generated by self-assembled drilling with liquid metal droplets as etchant. The method is fully compatible with conventional molecular beam epitaxy equipment. We discuss the mechanism of nanohole formation and two applications: the creation of GaAs quantum rings and of GaAs quantum dots by nanohole filling.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2010.10.141