Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon

We have performed axisymmetric, transient simulations of the vertical Bridgman growth of mc-silicon to study the effect of the accelerated crucible rotation technique (ACRT) on the melt flow and impurity segregation. A solute transport model has been applied to predict the final segregation pattern of impurities in a circular ingot. The sinusoidal ACRT rotation cycle considered here suppresses mixing in the melt near the center, resulting in diffusion-limited mass transport. Therefore the radial impurity segregation is increased towards the center. The effect of increased radial segregation is intensified for low values of the Ekman time scale.