60-GHz Gigabits-Per-Second OOK Modulator With High Output Power in 90-nm CMOS

A new architecture for a 60-GHz on- off keying (OOK) modulator with high gain, high on/off isolation, high data rates, and high output power while retaining low direct-current (dc) power dissipation is presented in this brief. The modulator is designed in a 90-nm complementary metal-oxide-semiconduc...

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Veröffentlicht in:IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2011-05, Vol.58 (5), p.249-253
Hauptverfasser: Lee, Jae Jin, Park, Chul Soon
Format: Artikel
Sprache:eng
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Zusammenfassung:A new architecture for a 60-GHz on- off keying (OOK) modulator with high gain, high on/off isolation, high data rates, and high output power while retaining low direct-current (dc) power dissipation is presented in this brief. The modulator is designed in a 90-nm complementary metal-oxide-semiconductor process by current reuse and a dual-modulation technique and has 28.4-dB high on/off isolation, a gain of 9.9 dB at 60 GHz, and 1.5-dBm high OP1dB with 14.4-mW dc power consumption at the on-state of an OOK baseband signal. A data rate of up to 2 Gb/s has also been measured. The proposed 60-GHz OOK modulator, which can substitute for a power amplifier and an up-conversion mixer in a conventional 60-GHz OOK transmitter, helps make possible wireless multigigabit data transmission within a distance of 1 m using mobile devices with a 60-GHz OOK transceiver.
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2011.2124890