Development and characterisation of nanowire-based FETs
Development of Si nanowire-based FETs, suitable for sensor applications is reported. Process sequences for SOI and bulk p-channel FinFETs are described. SEM observations of the fabricated devices (180 nm wide, 87 nm or 175 nm high) are presented and discussed. Electrical characteristics measurements...
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| Veröffentlicht in: | Microelectronics and reliability 2011-07, Vol.51 (7), p.1162-1165 |
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| container_end_page | 1165 |
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| container_issue | 7 |
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| container_title | Microelectronics and reliability |
| container_volume | 51 |
| creator | Zaborowski, Michał Tomaszewski, Daniel Dumania, Piotr Grabiec, Piotr |
| description | Development of Si nanowire-based FETs, suitable for sensor applications is reported. Process sequences for SOI and bulk p-channel FinFETs are described. SEM observations of the fabricated devices (180
nm wide, 87
nm or 175
nm high) are presented and discussed. Electrical characteristics measurements and basic characterisation results obtained for these devices are described. A procedure for serial resistance extraction has been mentioned in more detail, due to its high value inherent in the process used. Several aspects of the device sensitivity to front- and back-gate control have been discussed from the point of view of its application in biochemical detectors. |
| doi_str_mv | 10.1016/j.microrel.2011.02.017 |
| format | Article |
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nm wide, 87
nm or 175
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nm wide, 87
nm or 175
nm high) are presented and discussed. Electrical characteristics measurements and basic characterisation results obtained for these devices are described. A procedure for serial resistance extraction has been mentioned in more detail, due to its high value inherent in the process used. Several aspects of the device sensitivity to front- and back-gate control have been discussed from the point of view of its application in biochemical detectors.</description><subject>Applied sciences</subject><subject>Biochemistry</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Extraction</subject><subject>General equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>Serials</subject><subject>Silicon</subject><subject>Transistors</subject><issn>0026-2714</issn><issn>1872-941X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LxDAQhoMouH78BelF9NI6k9akvSl-g-BFwVtIJ1PM0m3XpCr-e7OsetTTwPC88_EIcYBQIKA6mRcLT2EM3BcSEAuQBaDeEDOstcybCp83xQxAqlxqrLbFToxzANCJnQl9ye_cj8sFD1NmB5fRiw2WJg4-2smPQzZ22WCH8cMHzlsb2WXXV49xT2x1to-8_113xVNqX9zm9w83dxfn9zlVoKecySnWklqqGkWQ7iWUUFauZl1Rg9TYlhHqViqwbYlYsaJT2zlQjXYOy11xtJ67DOPrG8fJLHwk7ns78PgWTV2nB_G0lok8_pNEraFUycxqqFqjSVuMgTuzDH5hw6dBMCunZm5-nJqVUwPSpGQKHn7vsJFs3wU7kI-_aVmVZQl1mbizNcdJzbvnYCJ5HohdskiTcaP_b9UXVmyPZQ</recordid><startdate>20110701</startdate><enddate>20110701</enddate><creator>Zaborowski, Michał</creator><creator>Tomaszewski, Daniel</creator><creator>Dumania, Piotr</creator><creator>Grabiec, Piotr</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110701</creationdate><title>Development and characterisation of nanowire-based FETs</title><author>Zaborowski, Michał ; Tomaszewski, Daniel ; Dumania, Piotr ; Grabiec, Piotr</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c407t-ecd6e72cbc496c0101c12034d8e74c91c9abe108b260ab3114e6c5afd0697dd13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Biochemistry</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Extraction</topic><topic>General equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</topic><topic>Serials</topic><topic>Silicon</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zaborowski, Michał</creatorcontrib><creatorcontrib>Tomaszewski, Daniel</creatorcontrib><creatorcontrib>Dumania, Piotr</creatorcontrib><creatorcontrib>Grabiec, Piotr</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronics and reliability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zaborowski, Michał</au><au>Tomaszewski, Daniel</au><au>Dumania, Piotr</au><au>Grabiec, Piotr</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development and characterisation of nanowire-based FETs</atitle><jtitle>Microelectronics and reliability</jtitle><date>2011-07-01</date><risdate>2011</risdate><volume>51</volume><issue>7</issue><spage>1162</spage><epage>1165</epage><pages>1162-1165</pages><issn>0026-2714</issn><eissn>1872-941X</eissn><coden>MCRLAS</coden><abstract>Development of Si nanowire-based FETs, suitable for sensor applications is reported. Process sequences for SOI and bulk p-channel FinFETs are described. SEM observations of the fabricated devices (180
nm wide, 87
nm or 175
nm high) are presented and discussed. Electrical characteristics measurements and basic characterisation results obtained for these devices are described. A procedure for serial resistance extraction has been mentioned in more detail, due to its high value inherent in the process used. Several aspects of the device sensitivity to front- and back-gate control have been discussed from the point of view of its application in biochemical detectors.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.microrel.2011.02.017</doi><tpages>4</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Biochemistry Devices Electronics Exact sciences and technology Extraction General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Nanocomposites Nanomaterials Nanostructure Nanowires Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Serials Silicon Transistors |
| title | Development and characterisation of nanowire-based FETs |
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