Development and characterisation of nanowire-based FETs

Development of Si nanowire-based FETs, suitable for sensor applications is reported. Process sequences for SOI and bulk p-channel FinFETs are described. SEM observations of the fabricated devices (180 nm wide, 87 nm or 175 nm high) are presented and discussed. Electrical characteristics measurements...

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Veröffentlicht in:	Microelectronics and reliability 2011-07, Vol.51 (7), p.1162-1165
Hauptverfasser:	Zaborowski, Michał, Tomaszewski, Daniel, Dumania, Piotr, Grabiec, Piotr
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Biochemistry Devices Electronics Exact sciences and technology Extraction General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Nanocomposites Nanomaterials Nanostructure Nanowires Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Serials Silicon Transistors
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Beschreibung
Zusammenfassung:	Development of Si nanowire-based FETs, suitable for sensor applications is reported. Process sequences for SOI and bulk p-channel FinFETs are described. SEM observations of the fabricated devices (180 nm wide, 87 nm or 175 nm high) are presented and discussed. Electrical characteristics measurements and basic characterisation results obtained for these devices are described. A procedure for serial resistance extraction has been mentioned in more detail, due to its high value inherent in the process used. Several aspects of the device sensitivity to front- and back-gate control have been discussed from the point of view of its application in biochemical detectors.
ISSN:	0026-2714 1872-941X
DOI:	10.1016/j.microrel.2011.02.017