Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD

Micro-Raman spectroscopy was used to evaluate the internal stress of the cross section of a large single crystal diamond (SCD) bulk of 9 mm thickness, which was synthesized under a repetitive growth by using microwave plasma chemical vapor deposition (MWPCVD). The variation of internal stress estima...

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Veröffentlicht in:	Diamond and related materials 2010-02, Vol.19 (2), p.171-173
Hauptverfasser:	Feng, Z.B., Chayahara, A., Mokuno, Y., Yamada, H., Shikata, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bulk crystal Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross sections Cross-disciplinary physics: materials science rheology Exact sciences and technology Fullerenes and related materials diamonds, graphite Internal stress Materials science Mechanical and acoustical properties Methods of deposition of films and coatings film growth and epitaxy Micro-Raman spectroscopy Microwave plasmas Physical properties of thin films, nonelectronic Physics Raman spectra Residual stress Single crystal diamond Single crystals Specific materials Spectroscopy Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth
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