Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD

Micro-Raman spectroscopy was used to evaluate the internal stress of the cross section of a large single crystal diamond (SCD) bulk of 9 mm thickness, which was synthesized under a repetitive growth by using microwave plasma chemical vapor deposition (MWPCVD). The variation of internal stress estimated from Raman shift, is approximately 0.08 GPa. In addition, the nitrogen effect on internal stress is evaluated approximately 4.05 × 10 − 2 GPa·ppm − 1 , which is based on our simplified model.