Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD
Micro-Raman spectroscopy was used to evaluate the internal stress of the cross section of a large single crystal diamond (SCD) bulk of 9 mm thickness, which was synthesized under a repetitive growth by using microwave plasma chemical vapor deposition (MWPCVD). The variation of internal stress estima...
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| Veröffentlicht in: | Diamond and related materials 2010-02, Vol.19 (2), p.171-173 |
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| container_end_page | 173 |
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| container_issue | 2 |
| container_start_page | 171 |
| container_title | Diamond and related materials |
| container_volume | 19 |
| creator | Feng, Z.B. Chayahara, A. Mokuno, Y. Yamada, H. Shikata, S. |
| description | Micro-Raman spectroscopy was used to evaluate the internal stress of the cross section of a large single crystal diamond (SCD) bulk of 9
mm thickness, which was synthesized under a repetitive growth by using microwave plasma chemical vapor deposition (MWPCVD). The variation of internal stress estimated from Raman shift, is approximately 0.08
GPa. In addition, the nitrogen effect on internal stress is evaluated approximately 4.05
×
10
−
2
GPa·ppm
−
1
, which is based on our simplified model. |
| doi_str_mv | 10.1016/j.diamond.2009.10.002 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_889408706</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925963509002775</els_id><sourcerecordid>889408706</sourcerecordid><originalsourceid>FETCH-LOGICAL-c437t-c3727e0e30c04e1b5e1502e67849a17bdf02d6ec5f84456057580aaff8c378a43</originalsourceid><addsrcrecordid>eNqFUE2v0zAQtBBIlAc_AckXxCll7diJc0KofEpPQkLA1do6m4crJyne9KHy63FoxZXTSrMzOzsjxHMFWwWqeXXY9hHHeeq3GqAr2BZAPxAb5dquAmj0Q7GBTtuqa2r7WDxhPgAo3Rm1EekLjjhJPlJYMsp5kChDnpklFyTO0wVKmO9IcpzuEpX9mRdM8uoq-TwtP4jjb-rl_ixPK02OsZz5hfckjwl5RLn7_vapeDRgYnp2nTfi2_t3X3cfq9vPHz7t3txWwdTtUoW61S0B1RDAkNpbUhY0Na0zHap23w-g-4aCHZwxtgHbWgeIw-CK0qGpb8TLy91jnn-eiBc_Rg6UEk40n9g71xlwLTSFaS_Mv5kzDf6Y44j57BX4tVx_8NeYfi13hUu5Rffi6oAcMA0ZpxD5n1hrU3eqWT95feFRiXsfKXsOkaZAfcylX9_P8T9OfwBDB5Lm</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>889408706</pqid></control><display><type>article</type><title>Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Feng, Z.B. ; Chayahara, A. ; Mokuno, Y. ; Yamada, H. ; Shikata, S.</creator><creatorcontrib>Feng, Z.B. ; Chayahara, A. ; Mokuno, Y. ; Yamada, H. ; Shikata, S.</creatorcontrib><description>Micro-Raman spectroscopy was used to evaluate the internal stress of the cross section of a large single crystal diamond (SCD) bulk of 9
mm thickness, which was synthesized under a repetitive growth by using microwave plasma chemical vapor deposition (MWPCVD). The variation of internal stress estimated from Raman shift, is approximately 0.08
GPa. In addition, the nitrogen effect on internal stress is evaluated approximately 4.05
×
10
−
2
GPa·ppm
−
1
, which is based on our simplified model.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2009.10.002</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Bulk crystal ; Chemical vapor deposition ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross sections ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Internal stress ; Materials science ; Mechanical and acoustical properties ; Methods of deposition of films and coatings; film growth and epitaxy ; Micro-Raman spectroscopy ; Microwave plasmas ; Physical properties of thin films, nonelectronic ; Physics ; Raman spectra ; Residual stress ; Single crystal diamond ; Single crystals ; Specific materials ; Spectroscopy ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth</subject><ispartof>Diamond and related materials, 2010-02, Vol.19 (2), p.171-173</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c437t-c3727e0e30c04e1b5e1502e67849a17bdf02d6ec5f84456057580aaff8c378a43</citedby><cites>FETCH-LOGICAL-c437t-c3727e0e30c04e1b5e1502e67849a17bdf02d6ec5f84456057580aaff8c378a43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.diamond.2009.10.002$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22439164$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Feng, Z.B.</creatorcontrib><creatorcontrib>Chayahara, A.</creatorcontrib><creatorcontrib>Mokuno, Y.</creatorcontrib><creatorcontrib>Yamada, H.</creatorcontrib><creatorcontrib>Shikata, S.</creatorcontrib><title>Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD</title><title>Diamond and related materials</title><description>Micro-Raman spectroscopy was used to evaluate the internal stress of the cross section of a large single crystal diamond (SCD) bulk of 9
mm thickness, which was synthesized under a repetitive growth by using microwave plasma chemical vapor deposition (MWPCVD). The variation of internal stress estimated from Raman shift, is approximately 0.08
GPa. In addition, the nitrogen effect on internal stress is evaluated approximately 4.05
×
10
−
2
GPa·ppm
−
1
, which is based on our simplified model.</description><subject>Bulk crystal</subject><subject>Chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross sections</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Internal stress</subject><subject>Materials science</subject><subject>Mechanical and acoustical properties</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Micro-Raman spectroscopy</subject><subject>Microwave plasmas</subject><subject>Physical properties of thin films, nonelectronic</subject><subject>Physics</subject><subject>Raman spectra</subject><subject>Residual stress</subject><subject>Single crystal diamond</subject><subject>Single crystals</subject><subject>Specific materials</subject><subject>Spectroscopy</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFUE2v0zAQtBBIlAc_AckXxCll7diJc0KofEpPQkLA1do6m4crJyne9KHy63FoxZXTSrMzOzsjxHMFWwWqeXXY9hHHeeq3GqAr2BZAPxAb5dquAmj0Q7GBTtuqa2r7WDxhPgAo3Rm1EekLjjhJPlJYMsp5kChDnpklFyTO0wVKmO9IcpzuEpX9mRdM8uoq-TwtP4jjb-rl_ixPK02OsZz5hfckjwl5RLn7_vapeDRgYnp2nTfi2_t3X3cfq9vPHz7t3txWwdTtUoW61S0B1RDAkNpbUhY0Na0zHap23w-g-4aCHZwxtgHbWgeIw-CK0qGpb8TLy91jnn-eiBc_Rg6UEk40n9g71xlwLTSFaS_Mv5kzDf6Y44j57BX4tVx_8NeYfi13hUu5Rffi6oAcMA0ZpxD5n1hrU3eqWT95feFRiXsfKXsOkaZAfcylX9_P8T9OfwBDB5Lm</recordid><startdate>20100201</startdate><enddate>20100201</enddate><creator>Feng, Z.B.</creator><creator>Chayahara, A.</creator><creator>Mokuno, Y.</creator><creator>Yamada, H.</creator><creator>Shikata, S.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20100201</creationdate><title>Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD</title><author>Feng, Z.B. ; Chayahara, A. ; Mokuno, Y. ; Yamada, H. ; Shikata, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c437t-c3727e0e30c04e1b5e1502e67849a17bdf02d6ec5f84456057580aaff8c378a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Bulk crystal</topic><topic>Chemical vapor deposition</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross sections</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Internal stress</topic><topic>Materials science</topic><topic>Mechanical and acoustical properties</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Micro-Raman spectroscopy</topic><topic>Microwave plasmas</topic><topic>Physical properties of thin films, nonelectronic</topic><topic>Physics</topic><topic>Raman spectra</topic><topic>Residual stress</topic><topic>Single crystal diamond</topic><topic>Single crystals</topic><topic>Specific materials</topic><topic>Spectroscopy</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feng, Z.B.</creatorcontrib><creatorcontrib>Chayahara, A.</creatorcontrib><creatorcontrib>Mokuno, Y.</creatorcontrib><creatorcontrib>Yamada, H.</creatorcontrib><creatorcontrib>Shikata, S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Feng, Z.B.</au><au>Chayahara, A.</au><au>Mokuno, Y.</au><au>Yamada, H.</au><au>Shikata, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD</atitle><jtitle>Diamond and related materials</jtitle><date>2010-02-01</date><risdate>2010</risdate><volume>19</volume><issue>2</issue><spage>171</spage><epage>173</epage><pages>171-173</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>Micro-Raman spectroscopy was used to evaluate the internal stress of the cross section of a large single crystal diamond (SCD) bulk of 9
mm thickness, which was synthesized under a repetitive growth by using microwave plasma chemical vapor deposition (MWPCVD). The variation of internal stress estimated from Raman shift, is approximately 0.08
GPa. In addition, the nitrogen effect on internal stress is evaluated approximately 4.05
×
10
−
2
GPa·ppm
−
1
, which is based on our simplified model.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2009.10.002</doi><tpages>3</tpages></addata></record> |
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| ispartof | Diamond and related materials, 2010-02, Vol.19 (2), p.171-173 |
| issn | 0925-9635 1879-0062 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Bulk crystal Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross sections Cross-disciplinary physics: materials science rheology Exact sciences and technology Fullerenes and related materials diamonds, graphite Internal stress Materials science Mechanical and acoustical properties Methods of deposition of films and coatings film growth and epitaxy Micro-Raman spectroscopy Microwave plasmas Physical properties of thin films, nonelectronic Physics Raman spectra Residual stress Single crystal diamond Single crystals Specific materials Spectroscopy Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth |
| title | Raman spectra of a cross section of a large single crystal diamond synthesized by using microwave plasma CVD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T14%3A43%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Raman%20spectra%20of%20a%20cross%20section%20of%20a%20large%20single%20crystal%20diamond%20synthesized%20by%20using%20microwave%20plasma%20CVD&rft.jtitle=Diamond%20and%20related%20materials&rft.au=Feng,%20Z.B.&rft.date=2010-02-01&rft.volume=19&rft.issue=2&rft.spage=171&rft.epage=173&rft.pages=171-173&rft.issn=0925-9635&rft.eissn=1879-0062&rft_id=info:doi/10.1016/j.diamond.2009.10.002&rft_dat=%3Cproquest_cross%3E889408706%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=889408706&rft_id=info:pmid/&rft_els_id=S0925963509002775&rfr_iscdi=true |