TiO sub(2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime)

The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 x 7), SiO sub(x/Si(111) and TiO) sub(2). These surfaces represent the different surface compositions encountered during TTIP mediated TiO sub(2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process. Detailed study of metal organic chemical vapor deposition of TiO2 on Si(111). Surface chemistry of titanium(IV) tetra isopropoxide on Si(111), SiO) sub(x) and TiO sub(2. Understanding of the changeover from reaction-limited growth to flux-limited growth. Importance of the surface stability of carbonaceous compounds. The transition from an amorphous interface to crystalline anatase TiO) sub(2) was monitored.