A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters

A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters

An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2006-03, Vol.53 (3), p.571-573
Hauptverfasser: Torres-Rios, E., Torres-Torres, R., Valdovinos-Fierro, G., Gutierrez-D, E.A.
Format: Artikel
Sprache:eng
Schlagworte:
Accuracy
Applied sciences
Bias
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
Extraction
Gates
Integrated circuits
Mathematical analysis
MOSFETs
Parameter extraction
Resistance measurement
RF-CMOS
Scattering parameters
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
series resistance
Simulation
Transistors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device. The method is verified by achieving good agreement between simulated and experimental data for a 0.18-/spl mu/m channel-length MOSFET.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.870328