Correlation of Electron Radiation Induced-Damage in GaAs Solar Cells

Correlation of Electron Radiation Induced-Damage in GaAs Solar Cells

GaAs solar cells with different structures and polarities were irradiated with 1 and 5 MeV electrons. The energy dependence of the electron damage coefficients for the photocurrent, photovoltage, and maximum power were found to vary approximately linearly with NIEL in contrast to what has been found...

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Veröffentlicht in:IEEE transactions on nuclear science 2006-08, Vol.53 (4), p.1988-1994
Hauptverfasser: Warner, J.H., Messenger, S.R., Walters, R.J., Summers, G.P., Lorentzen, J.R., Wilt, D.M., Smith, M.A.
Format: Artikel
Sprache:eng
Schlagworte:
Damage correlation
Degradation
displacement damage
Distributed control
electron displacement damage
Electrons
Energy loss
GaAs solar cells
Gallium arsenide
Laboratories
nonionizing energy loss (NIEL)
Photovoltaic cells
Protons
radiation damage
Semiconductor materials
Solids
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Beschreibung
Zusammenfassung:GaAs solar cells with different structures and polarities were irradiated with 1 and 5 MeV electrons. The energy dependence of the electron damage coefficients for the photocurrent, photovoltage, and maximum power were found to vary approximately linearly with NIEL in contrast to what has been found for other GaAs cells
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.877877