Annealing ambient on the evolution of He-induced voids in silicon

► Open-volume defects could be influenced by annealing ambient in He-implanted silicon. ► Void concentration decreases with the increase in the thickness of epitaxy. The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening...

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Veröffentlicht in:Applied surface science 2011-06, Vol.257 (16), p.7036-7040
Hauptverfasser: Li, B.S., Zhang, C.H., Zhong, Y.R., Wang, D.N., Zhou, L.H., Yang, Y.T., Zhang, L.Q., Zhang, H.H., Zhang, Y., Han, L.H.
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Sprache:eng
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Zusammenfassung:► Open-volume defects could be influenced by annealing ambient in He-implanted silicon. ► Void concentration decreases with the increase in the thickness of epitaxy. The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A 〈1 0 0〉-oriented silicon wafer was implanted with He ions at an energy of 15 keV to a dose of 2 × 10 16 cm −2 at room temperature. Post-implantation, the samples were annealed at a temperature of 1000 °C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2011.02.125