Annealing ambient on the evolution of He-induced voids in silicon
► Open-volume defects could be influenced by annealing ambient in He-implanted silicon. ► Void concentration decreases with the increase in the thickness of epitaxy. The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening...
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Veröffentlicht in: | Applied surface science 2011-06, Vol.257 (16), p.7036-7040 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | ► Open-volume defects could be influenced by annealing ambient in He-implanted silicon. ► Void concentration decreases with the increase in the thickness of epitaxy.
The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A 〈1
0
0〉-oriented silicon wafer was implanted with He ions at an energy of 15
keV to a dose of 2
×
10
16
cm
−2 at room temperature. Post-implantation, the samples were annealed at a temperature of 1000
°C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2011.02.125 |