Fabrication and characterization of an individual ZnO microwire-based UV photodetector

In this paper, a single ZnO microwire-based photodetector for the monitoring of ultraviolet (UV) radiation is described. Single crystal ZnO microwires were synthesized using a chemical vapor deposition (CVD) on the Si or Al 2O 3 substrate. The UV photodetector was fabricated by using in-situ lift-ou...

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Veröffentlicht in:	Solid state sciences 2011-05, Vol.13 (5), p.1205-1210
Hauptverfasser:	Chai, G.Y., Chow, L., Lupan, O., Rusu, E., Stratan, G.I., Heinrich, H., Ursaki, V.V., Tiginyanu, I.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied sciences Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Monitoring Optoelectronic devices Photodetector Photodetectors Physics radiation Relative humidity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon substrates Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Ultraviolet UV Zinc oxide ZnO microwire
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Zusammenfassung:	In this paper, a single ZnO microwire-based photodetector for the monitoring of ultraviolet (UV) radiation is described. Single crystal ZnO microwires were synthesized using a chemical vapor deposition (CVD) on the Si or Al 2O 3 substrate. The UV photodetector was fabricated by using in-situ lift-out method in a focused ion beam system to manipulate individual zinc oxide microwire. The photodetector prototype consists of a single ZnO microwire (20 μm in length) and exhibits a response of ∼10 mA/W for UV light (365 nm) under 1 V bias. The transient response measurements revealed relatively fast response. The effect of oxygen adsorption and of different relative humidity conditions on the electronic transport through individual microwire is explored and discussed. [Display omitted]
ISSN:	1293-2558 1873-3085
DOI:	10.1016/j.solidstatesciences.2011.01.010