Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to n/cm by 1 MeV Neutrons

Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to n/cm by 1 MeV Neutrons

Heavily irradiated SiC diodes have been studied by means of Photo Induced Current Transient Spectroscopy (PICTS) technique in order to characterize the electronic levels associated with the irradiation-induced defects.

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Veröffentlicht in:IEEE transactions on nuclear science 2006-10, Vol.53 (5), p.2977
Hauptverfasser: Nava, F, Castaldini, A, Cavallini, A, Errani, P, Cindro, V
Format: Artikel
Sprache:eng
Schlagworte:
Carbon
Compensation
Defects
Diodes
Electronics
Fluence
Irradiation
Silicon carbide
Spectrum analysis
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Zusammenfassung:Heavily irradiated SiC diodes have been studied by means of Photo Induced Current Transient Spectroscopy (PICTS) technique in order to characterize the electronic levels associated with the irradiation-induced defects.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.882777