Investigation of Ti/Pd Bilayer for Single Photon Detection

Transition-edge sensor (TES) microcalorimeters are promising for application in the field of quantum information and quantum computation thanks to their outstanding single photon detection capabilities. Good energy resolution and photon number discrimination at visible and near-infrared wavelengths...

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Veröffentlicht in:	IEEE transactions on applied superconductivity 2009-06, Vol.19 (3), p.493-495
Hauptverfasser:	Taralli, E., Portesi, C., Rocci, R., Rajteri, M., Monticone, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Detectors Devices Electrical engineering. Electrical power engineering Electromagnets Electronics Energy resolution Exact sciences and technology Fabrication General equipment and techniques Gold Instruments, apparatus, components and techniques common to several branches of physics and astronomy Microcalorimeters Optical computing Optoelectronic and photonic sensors Optoelectronic devices Palladium Photons Physics Quantum computing Reduction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon Superconducting device fabrication Superconducting devices superconducting radiation detectors Temperature distribution Temperature sensors Titanium Various equipment and components
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Beschreibung
Zusammenfassung:	Transition-edge sensor (TES) microcalorimeters are promising for application in the field of quantum information and quantum computation thanks to their outstanding single photon detection capabilities. Good energy resolution and photon number discrimination at visible and near-infrared wavelengths make them extensively used as single photon detectors. In this work we report details on the fabrication of Pd/Ti TESs deposited by e-beam evaporation on silicon nitride substrates. We use Pd as alternative to Au layer thanks to its stronger influence on the Ti layer, that allows to obtain the same temperature reduction with thinner layers. The transition temperatures T c of the devices range from 83 to 110 mK with a transition width DeltaT c =0.5 mK. Thermal and electric characteristics of Pd/Ti TESs at different temperatures and its capability as single photon sensor are reported.
ISSN:	1051-8223 1558-2515
DOI:	10.1109/TASC.2009.2019561