Passive mode locking of an in-band-pumped Ho:YLiF4 laser at 2.06 μm

We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.1 ps and average power of 0.58 W has been obtained at a repet...

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Veröffentlicht in:	Optics letters 2011-08, Vol.36 (16), p.3209-3211
Hauptverfasser:	COLUCCELLI, Nicola, LAGATSKY, Alexander, DI LIETO, Alberto, TONELLI, Mauro, GALZERANO, Gianluca, SIBBETT, Wilson, LAPORTA, Paolo
Format:	Artikel
Sprache:	eng
Schlagworte:	Doped-insulator lasers and other solid state lasers Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser optical systems: design and operation Lasers Modulation, tuning, and mode locking Optics Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.1 ps and average power of 0.58 W has been obtained at a repetition frequency of 122 MHz. A maximum output power of 1.7 W has been generated with a corresponding pulse duration of 1.9 ps.
ISSN:	0146-9592 1539-4794
DOI:	10.1364/OL.36.003209