High Electron Mobility in Air for N,N′-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces
High‐mobility and air‐stable n‐type organic field transistors based on solution‐crystallized N,N′‐1H,1H‐perfluorobutyldicyanoperylene carboxydi‐imide (PDIF‐ CN2) are developed. Electron mobility as high as 1.3 cm2 V−1 s−1 is achieved owing to the almost‐perfect periodic crystal packing....
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Veröffentlicht in: | Advanced materials (Weinheim) 2011-08, Vol.23 (32), p.3681-3685 |
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creator | Soeda, Junshi Uemura, Takafumi Mizuno, Yu Nakao, Akiko Nakazawa, Yasuhiro Facchetti, Antonio Takeya, Jun |
description | High‐mobility and air‐stable n‐type organic field transistors based on solution‐crystallized N,N′‐1H,1H‐perfluorobutyldicyanoperylene carboxydi‐imide (PDIF‐ CN2) are developed. Electron mobility as high as 1.3 cm2 V−1 s−1 is achieved owing to the almost‐perfect periodic crystal packing. |
doi_str_mv | 10.1002/adma.201101467 |
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subjects | Air air-stable materials Crystallization Crystallography, X-Ray Electrons Hydrophobic and Hydrophilic Interactions Imides - chemistry Materials Testing Membranes, Artificial Models, Molecular Molecular Structure n-type materials organic field-effect transistors organic single-crystal transistors Particle Size Perylene - analogs & derivatives Perylene - chemistry Semiconductors solution-processed organic devices Solutions Surface Properties Transistors, Electronic |
title | High Electron Mobility in Air for N,N′-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces |
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