High Electron Mobility in Air for N,N′-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces

High Electron Mobility in Air for N,N′-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces

High‐mobility and air‐stable n‐type organic field transistors based on solution‐crystallized N,N′‐1H,1H‐perfluoro­butyldicyanoperylene carboxydi‐imide (PDIF‐ CN2) are developed. Electron mobility as high as 1.3 cm2 V−1 s−1 is achieved owing to the almost‐perfect periodic crystal packing....

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Veröffentlicht in:Advanced materials (Weinheim) 2011-08, Vol.23 (32), p.3681-3685
Hauptverfasser: Soeda, Junshi, Uemura, Takafumi, Mizuno, Yu, Nakao, Akiko, Nakazawa, Yasuhiro, Facchetti, Antonio, Takeya, Jun
Format: Artikel
Sprache:eng
Schlagworte:
Air
air-stable materials
Crystallization
Crystallography, X-Ray
Electrons
Hydrophobic and Hydrophilic Interactions
Imides - chemistry
Materials Testing
Membranes, Artificial
Models, Molecular
Molecular Structure
n-type materials
organic field-effect transistors
organic single-crystal transistors
Particle Size
Perylene - analogs & derivatives
Perylene - chemistry
Semiconductors
solution-processed organic devices
Solutions
Surface Properties
Transistors, Electronic
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Zusammenfassung:High‐mobility and air‐stable n‐type organic field transistors based on solution‐crystallized N,N′‐1H,1H‐perfluoro­butyldicyanoperylene carboxydi‐imide (PDIF‐ CN2) are developed. Electron mobility as high as 1.3 cm2 V−1 s−1 is achieved owing to the almost‐perfect periodic crystal packing.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201101467