Structural, photoluminescent and electrical properties of CdTe films with different compositions fabricated by CMBD

Structural, photoluminescent and electrical properties of CdTe films with different compositions fabricated by CMBD

CdTe films with different compositions (Cd-rich, Te-rich and stoichiometric) were fabricated by a novel and low cost chemical molecular beam deposition method (CMBD) in atmospheric pressure hydrogen flow. Cd and Te granules were used as precursors. The films were deposited on ceramic (SiO 2:Al 2O 3)...

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Veröffentlicht in:Solar energy 2009, Vol.83 (1), p.90-93
Hauptverfasser: Razykov, T.M., Contreras-Puente, G., Chornokur, G.C., Dybjec, M., Emirov, Yu, Ergashev, B., Ferekides, C.S., Hubbimov, A., Ikramov, B., Kouchkarov, K.M., Mathew, X., Morel, D., Ostapenko, S., Sanchez-Meza, E., Stefanakos, E., Upadhyaya, H.M., Vigil-Galan, O., Vorobiev, Yu.V.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Atmospheric pressure
Barometric pressure
Cadmium
Cadmium telluride
Cadmium tellurides
CdTe
Chemical molecular beam deposition
Deposition
Electric properties
Energy
Exact sciences and technology
Granular materials
Luminescence
Molecular beams
Natural energy
Photoluminescence
Photovoltaic conversion
Resistivity
Solar cells. Photoelectrochemical cells
Solar energy
Thin film
Thin films
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Beschreibung
Zusammenfassung:CdTe films with different compositions (Cd-rich, Te-rich and stoichiometric) were fabricated by a novel and low cost chemical molecular beam deposition method (CMBD) in atmospheric pressure hydrogen flow. Cd and Te granules were used as precursors. The films were deposited on ceramic (SiO 2:Al 2O 3) substrates at 580 °C and 600 °C. The growth rate was varied in the range of 9–30 Å/s. The composition (Cd/Te) of the samples was changed by controlling the molecular beam intensity (MBI) ratio. Three samples fabricated at MBI ratios Cd/Te = 0.5, 1.0 and 1.16 were investigated by XRD, AFM, EDX, SEM, photoluminescence (PL) and Hall methods.
ISSN:0038-092X
1471-1257
DOI:10.1016/j.solener.2008.07.003