Enhancement in the extraction efficiency and resisting electrostatic discharge ability of GaN-based light emitting diode by naturally grown textured surface

GaN-based light-emitting diodes (LEDs) with naturally textured surfaces were grown by metal-organic chemical vapor deposition (MOCVD). A naturally textured p-GaN surface layer was fabricated by controlling the growth temperature. The output power of light from the naturally textured surface GaN-based LED, whose p-GaN layer was grown at 850 °C, was 48.6% higher than that from a commercial GaN-based LED. The GaN-based LED with a naturally textured surface and a thick p-GaN layer with a thickness of 300 nm, which was grown at a high growth temperature, exhibited improved electrostatic discharge (ESD) resistance and could resist a reverse bias voltage of as high as 3500 V. The experimental results demonstrate that the naturally textured growth method combined with a p-GaN layer grown at high temperature is suitable for manufacturing high-efficient low-cost GaN-based LEDs. ► GaN-based LEDs with naturally textured surfaces were grown by MOCVD.► GaN-based LEDs with naturally textured surfaces can enhance output power of light. ► GaN LED with a textured surface and a thick p-GaN layer can improve ESD resistance.