Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

Ga doping in indium zinc oxide (IZO)‐based amorphous‐oxide semiconductors (AOSs) promotes the formation of oxide‐lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin‐film‐transistor performance (see figure). The mobility dependence on anneali...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2010-03, Vol.22 (12), p.1346-1350
Hauptverfasser: Jeong, Sunho, Ha, Young-Geun, Moon, Jooho, Facchetti, Antonio, Marks, Tobin J.
Format: Artikel
Sprache:eng
Schlagworte:
amorphous oxides
Doping
Gallium - chemistry
Indium
Indium - chemistry
Semiconductor devices
Semiconductors
solution-processed materials
Temperature
Thin films
thin-film transistors
Transistors
Zinc oxide
Zinc Oxide - chemistry
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Ga doping in indium zinc oxide (IZO)‐based amorphous‐oxide semiconductors (AOSs) promotes the formation of oxide‐lattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin‐film‐transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution‐processed, low‐temperature‐annealed AOSs.
ISSN:0935-9648
1521-4095
1521-4095
DOI:10.1002/adma.200902450