A Compact 6.5-W PHEMT MMIC Power Amplifier for Ku-Band Applications

A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554mm 2 (3.64mmtimes2.35mm) is designed to fully match 50-Omega input and output impedance. Under 8V and 200...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2007-02, Vol.17 (2), p.154-156
Hauptverfasser:	LIN, Che-Hung, LIU, Hong-Zhi, CHU, Chen-Kuo, HUANG, Hou-Kuei, LIU, Chi-Chuan, CHANG, Ching-Hsueh, WU, Chang-Luen, CHANG, Chian-Sem, WANG, Yeong-Her
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Amplification Amplifiers Application specific integrated circuits Applied sciences Circuit properties Density Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Gallium arsenide Impedance matching Indium gallium arsenide Indium gallium arsenides Ku-band Microwave amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave integrated circuits Microwaves MMICs Monolithic integrated circuits monolithic microwave integrated circuit (MMIC) PHEMTs power amplifier (PA) Power amplifiers pseudormorphic high electron mobility transistor (PHEMT)
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Beschreibung
Zusammenfassung:	A compact 6.5-W AlGaAs/InGaAs/GaAs PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA) for Ku-band applications is proposed. This two-stage amplifier with chip size of 8.554mm 2 (3.64mmtimes2.35mm) is designed to fully match 50-Omega input and output impedance. Under 8V and 2000mA dc bias condition, the PA deliver 38.1dBm (6.5W) saturated output power, 10.5-dB small signal gain and peak power added efficiency of 24.6% from 13.6 to 14.2GHz. This MMIC also achieved the best power densities (760mW/mm 2 ) at Ku band reported to date
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2006.890347