Photoluminescence from silicon nanoparticles embedded in ammonium silicon hexafluoride
Silicon (Si) nanoparticles (NPs) were synthesized by transforming a Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH(4))(2)SiF(6) under acid vapor treatment. Si-NPs which were found to be embedded within the polycrystalline (ASH) layer exhibit a strong green-orange photoluminescence (P...
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| Veröffentlicht in: | Nanotechnology 2010-10, Vol.21 (43), p.435701-435701 |
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| creator | Kalem, Seref Werner, Peter Talalaev, Vadim Becker, Michael Arthursson, Örjan Zakharov, Nikolai |
| description | Silicon (Si) nanoparticles (NPs) were synthesized by transforming a Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH(4))(2)SiF(6) under acid vapor treatment. Si-NPs which were found to be embedded within the polycrystalline (ASH) layer exhibit a strong green-orange photoluminescence (PL). Differential PL measurements revealed a major double component spectrum consisting of a broad band associated with the ASH-Si wafer interfacial porous oxide layer and a high energy band attributable to Si-NPs embedded in the ASH. The origin of the latter emission can be explained in terms of quantum/spatial confinement effects probably mediated by oxygen related defects in or around Si-NPs. Although Si-NPs are derived from the interface they are much smaller in size than those embedded within the interfacial porous oxide layer (SiO(x), x > 1.5). Transmission electron microscopy (TEM) combined with Raman scattering and Fourier transformed infrared (FTIR) analysis confirmed the presence of Si-NP and Si-O bondings pointing to the role of oxygen related defects in a porous/amorphous structure. The presence of oxygen of up to 4.5 at.% in the (NH(4))(2)SiF(6) layer was confirmed by energy dispersive spectroscopy (EDS) analysis. |
| doi_str_mv | 10.1088/0957-4484/21/43/435701 |
| format | Article |
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Si-NPs which were found to be embedded within the polycrystalline (ASH) layer exhibit a strong green-orange photoluminescence (PL). Differential PL measurements revealed a major double component spectrum consisting of a broad band associated with the ASH-Si wafer interfacial porous oxide layer and a high energy band attributable to Si-NPs embedded in the ASH. The origin of the latter emission can be explained in terms of quantum/spatial confinement effects probably mediated by oxygen related defects in or around Si-NPs. Although Si-NPs are derived from the interface they are much smaller in size than those embedded within the interfacial porous oxide layer (SiO(x), x > 1.5). Transmission electron microscopy (TEM) combined with Raman scattering and Fourier transformed infrared (FTIR) analysis confirmed the presence of Si-NP and Si-O bondings pointing to the role of oxygen related defects in a porous/amorphous structure. 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Si-NPs which were found to be embedded within the polycrystalline (ASH) layer exhibit a strong green-orange photoluminescence (PL). Differential PL measurements revealed a major double component spectrum consisting of a broad band associated with the ASH-Si wafer interfacial porous oxide layer and a high energy band attributable to Si-NPs embedded in the ASH. The origin of the latter emission can be explained in terms of quantum/spatial confinement effects probably mediated by oxygen related defects in or around Si-NPs. Although Si-NPs are derived from the interface they are much smaller in size than those embedded within the interfacial porous oxide layer (SiO(x), x > 1.5). Transmission electron microscopy (TEM) combined with Raman scattering and Fourier transformed infrared (FTIR) analysis confirmed the presence of Si-NP and Si-O bondings pointing to the role of oxygen related defects in a porous/amorphous structure. The presence of oxygen of up to 4.5 at.% in the (NH(4))(2)SiF(6) layer was confirmed by energy dispersive spectroscopy (EDS) analysis.</description><subject>Ashes</subject><subject>Defects</subject><subject>electronic states</subject><subject>etching technique</subject><subject>interface</subject><subject>luminescence properties</subject><subject>Nanoparticles</subject><subject>Nanotechnology</subject><subject>optical-properties</subject><subject>Oxides</subject><subject>phase-transition</subject><subject>Photoluminescence</subject><subject>porous silicon</subject><subject>quantum confinement</subject><subject>si nanocrystals</subject><subject>Silicon</subject><subject>Wafers</subject><issn>0957-4484</issn><issn>1361-6528</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkU2LFDEQhoMo7uzqX1j65qmdfCd9lEVXYWEFP66hOl1hIt2dNplG_fdm6HU8KCwUhFBPvSnyEHLN6GtGrd3TTplWSiv3nO2lqKUMZU_IjgnNWq24fUp2Z-iCXJbyjVLGLGfPyQWn1ujO8h35-vGQjmlcpzhj8Th7bEJOU1PiGH2amxnmtEA-Rj9iaXDqcRhwaOLcwDSlOa5_0QP-hDCuKccBX5BnAcaCLx_OK_Ll3dvPN-_bu_vbDzdv7lovO3tshQD0SoK2BpXyzHOFAawwUgxGBqgtPgCoPogAiL3tTF_Beq_lrRJX5NOWW37gsvZuyXGC_MsliC5jQcj-4PwBxglzcQUdhL7nqIxDbaWTQXgHA-2c6KhmFKy2qq-pr7bUJafvK5ajm2L9nHGEGdNanLVUGy2peZQ0SmvNteWV1BvpcyolYzjvyqg7KXUnW-5ky3HmpHCb0jp4_fDE2k84nMf-OKxAuwExLefu_8PcMoTKs3_5R5b4DRqnuzw</recordid><startdate>20101029</startdate><enddate>20101029</enddate><creator>Kalem, Seref</creator><creator>Werner, Peter</creator><creator>Talalaev, Vadim</creator><creator>Becker, Michael</creator><creator>Arthursson, Örjan</creator><creator>Zakharov, Nikolai</creator><general>IOP Publishing</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>ADTPV</scope><scope>AOWAS</scope><scope>F1S</scope></search><sort><creationdate>20101029</creationdate><title>Photoluminescence from silicon nanoparticles embedded in ammonium silicon hexafluoride</title><author>Kalem, Seref ; Werner, Peter ; Talalaev, Vadim ; Becker, Michael ; Arthursson, Örjan ; Zakharov, Nikolai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c498t-33aec54a687e55c1c25efa83743d74fa54a2daa5bf3faeeb897be555bf5bfc853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Ashes</topic><topic>Defects</topic><topic>electronic states</topic><topic>etching technique</topic><topic>interface</topic><topic>luminescence properties</topic><topic>Nanoparticles</topic><topic>Nanotechnology</topic><topic>optical-properties</topic><topic>Oxides</topic><topic>phase-transition</topic><topic>Photoluminescence</topic><topic>porous silicon</topic><topic>quantum confinement</topic><topic>si nanocrystals</topic><topic>Silicon</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kalem, Seref</creatorcontrib><creatorcontrib>Werner, Peter</creatorcontrib><creatorcontrib>Talalaev, Vadim</creatorcontrib><creatorcontrib>Becker, Michael</creatorcontrib><creatorcontrib>Arthursson, Örjan</creatorcontrib><creatorcontrib>Zakharov, Nikolai</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>SwePub</collection><collection>SwePub Articles</collection><collection>SWEPUB Chalmers tekniska högskola</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kalem, Seref</au><au>Werner, Peter</au><au>Talalaev, Vadim</au><au>Becker, Michael</au><au>Arthursson, Örjan</au><au>Zakharov, Nikolai</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence from silicon nanoparticles embedded in ammonium silicon hexafluoride</atitle><jtitle>Nanotechnology</jtitle><addtitle>Nanotechnology</addtitle><date>2010-10-29</date><risdate>2010</risdate><volume>21</volume><issue>43</issue><spage>435701</spage><epage>435701</epage><pages>435701-435701</pages><issn>0957-4484</issn><issn>1361-6528</issn><eissn>1361-6528</eissn><abstract>Silicon (Si) nanoparticles (NPs) were synthesized by transforming a Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH(4))(2)SiF(6) under acid vapor treatment. Si-NPs which were found to be embedded within the polycrystalline (ASH) layer exhibit a strong green-orange photoluminescence (PL). Differential PL measurements revealed a major double component spectrum consisting of a broad band associated with the ASH-Si wafer interfacial porous oxide layer and a high energy band attributable to Si-NPs embedded in the ASH. The origin of the latter emission can be explained in terms of quantum/spatial confinement effects probably mediated by oxygen related defects in or around Si-NPs. Although Si-NPs are derived from the interface they are much smaller in size than those embedded within the interfacial porous oxide layer (SiO(x), x > 1.5). Transmission electron microscopy (TEM) combined with Raman scattering and Fourier transformed infrared (FTIR) analysis confirmed the presence of Si-NP and Si-O bondings pointing to the role of oxygen related defects in a porous/amorphous structure. The presence of oxygen of up to 4.5 at.% in the (NH(4))(2)SiF(6) layer was confirmed by energy dispersive spectroscopy (EDS) analysis.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>20876982</pmid><doi>10.1088/0957-4484/21/43/435701</doi><tpages>1</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Ashes Defects electronic states etching technique interface luminescence properties Nanoparticles Nanotechnology optical-properties Oxides phase-transition Photoluminescence porous silicon quantum confinement si nanocrystals Silicon Wafers |
| title | Photoluminescence from silicon nanoparticles embedded in ammonium silicon hexafluoride |
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