Photoluminescence of ZnO:Sb nanobelts fabricated by thermal evaporation method

Uniform ZnO nanobelts (NBs) were synthesized by a facile thermal evaporation method. Recombination mechanism of acceptor-related emissions in Sb doped ZnO NBs was investigated by temperature-dependent photoluminescence (PL) spectra. UV near-band-edge (NBE) emissions were dominant by acceptor-bound exciton (A 0X) at 3.358 eV and free electron-to-acceptor (FA) at 3.322 eV transitions at 81 K. Studies on A 0X intensity showed a quenching channel, the thermal dissociations of A 0X to a free exciton and electron hole pair with the temperature increase. The active energy of A 0X was estimated to be 19 meV using thermal quenching formula. The acceptor ionization energy was calculated to be 190 meV using Haynes rule. These results were very similar to those of antimony or phosphorus doped ZnO films. ► Sb doped ZnO nanobelts are fabricated by a simple thermal evaporation method. ► This is a combined study of FESEM, XPS, EDX, XRD and micro-PL. ► Acceptor-related PL properties are investigated by the temperature-dependent PL spectra.