Quantitative Measurements of Memory Effects in Wideband RF Power Amplifiers Driven by Modulated Signals

This letter proposes a novel metric to measure quantitatively the electrical memory effects in wideband power amplifiers (PAs) fed with modulated signals. With the proposed memory effect metrics, the intensity of the electrical memory effects for different PAs, under a variety of the excitation modu...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2007-01, Vol.17 (1), p.79-81
Hauptverfasser:	Taijun Liu, Boumaiza, S., Sesay, A.B., Ghannouchi, F.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Adjacent channel power ration (ACPR) Amplifiers Applied sciences Broadband amplifiers Circuit properties Electric variables measurement Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Excitation Intermodulation distortion memory effects Microwaves Power amplifiers power amplifiers (PAs) Power measurement Predistortion Radio frequencies Radio frequency Radiofrequency amplifiers RF signals Wideband
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Beschreibung
Zusammenfassung:	This letter proposes a novel metric to measure quantitatively the electrical memory effects in wideband power amplifiers (PAs) fed with modulated signals. With the proposed memory effect metrics, the intensity of the electrical memory effects for different PAs, under a variety of the excitation modulated signals, can be quantitatively defined. The examples given in this letter illustrate the effectiveness of this definition in measuring the electrical memory effects
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2006.887286