A Low Phase-Noise [Formula Omitted]-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel [Formula Omitted] HEMTs

A Low Phase-Noise [Formula Omitted]-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel [Formula Omitted] HEMTs

The VCO exhibits a frequency tuning range from 9.11 to 9.55 GHz with the varactor's voltage from 4 to 6 V, an average output power of 3.3 dBm, and an average efficiency of 7% at a gate bias of -3 V and a drain bias of 5 V. The measured phase noise is -82 dBc/Hz and -110 dBc/Hz at offsets of 100...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2007-01, Vol.55 (1), p.23
Hauptverfasser: Cheng, Z.Q, Yong Cai, Yong Cai, Jie Liu, Jie Liu, Yugang Zhou, Yugang Zhou, Lau, K.M, Chen, K.J
Format: Artikel
Sprache:eng
Schlagworte:
Bias
Electric potential
Gallium nitrides
Gates
High electron mobility transistors
Noise
Semiconductor devices
Varactors
Voltage
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Zusammenfassung:The VCO exhibits a frequency tuning range from 9.11 to 9.55 GHz with the varactor's voltage from 4 to 6 V, an average output power of 3.3 dBm, and an average efficiency of 7% at a gate bias of -3 V and a drain bias of 5 V. The measured phase noise is -82 dBc/Hz and -110 dBc/Hz at offsets of 100 kHz and 1 MHz at a varactor's voltage (Vtune)=5 V. The phase noise is the lowest reported thus far in VCOs made of GaN-based HEMTs.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2006.888942