Dc current transport behavior in amorphous GeSe films

Dc current transport behavior in amorphous GeSe films

The dc electric conduction behavior of amorphous GeSe films sandwiched between the Pt bottom electrode and various counter electrodes (Pt, Cr, and Ti) was examined in a voltage as well as a time domain. The time domain investigation identified time-dependent resistance change and relaxation. The vol...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2011-03, Vol.102 (4), p.1027-1032
Hauptverfasser: Jeong, Doo Seok, Park, Goon-Ho, Lim, Hyungkwang, Hwang, Cheol Seong, Lee, Suyoun, Cheong, Byung-ki
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Chromium
Condensed Matter Physics
Direct current
Electric potential
Electrodes
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Platinum
Processes
Surfaces and Interfaces
Thin Films
Time domain
Transport
Voltage
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The dc electric conduction behavior of amorphous GeSe films sandwiched between the Pt bottom electrode and various counter electrodes (Pt, Cr, and Ti) was examined in a voltage as well as a time domain. The time domain investigation identified time-dependent resistance change and relaxation. The voltage domain analysis revealed that the current transport in these metal-insulator-metal junctions is probably attributed to bulk-limited band-conduction due to delocalized charge carriers.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-011-6283-6