Longwave infrared focal plane arrays from type-II strained layer superlattices

Longwave infrared focal plane arrays from type-II strained layer superlattices

We report high quantum efficiency low-noise longwave infrared focal plane arrays (FPAs) made from type-II InAs/GaSb strained layer superlattice (SLS) photodiodes. In 320 × 256 FPAs operating at 77 K, we measure cutoff wavelength ∼8.5 μm, dark current density ∼10 −4 A/cm 2, average conversion efficie...

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Veröffentlicht in:Infrared physics & technology 2011-05, Vol.54 (3), p.243-246
Hauptverfasser: Sundaram, Mani, Reisinger, Axel, Dennis, Richard, Patnaude, Kelly, Burrows, Douglas, Bundas, Jason, Beech, Kim, Faska, Ross
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
Conversion
Density
Equivalence
Focal plane
Focal plane array
InAs/GaSb
Infrared
Longwave infrared
Photodiodes
SLS
Strained layer superlattices
Superlattices
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Beschreibung
Zusammenfassung:We report high quantum efficiency low-noise longwave infrared focal plane arrays (FPAs) made from type-II InAs/GaSb strained layer superlattice (SLS) photodiodes. In 320 × 256 FPAs operating at 77 K, we measure cutoff wavelength ∼8.5 μm, dark current density ∼10 −4 A/cm 2, average conversion efficiency ∼50% (with 2 μm-thick absorber photodiode), and temporal noise equivalent difference in temperature (NEDT)
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2010.12.022